IS61WV10248BLL-10TLI-TR

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The IS61WV10248BLL-10TLI-TR is a high-density pseudo SRAM memory device composed of 1,024Kbits of memory organized as 131,072 words by 8 bits. This device is a CMOS Static RAM organized as 131,072 words by 8 bits using low power CMOS technology. It is specifically designed for battery supported applications and operates from a single +3.0V or +3.3V supply. This device is an edge triggered synchronous memory. It provides demultiplexed address and data providing faster access times, lower power dissipation and high noise margin.

The IS61WV10248BLL-10TLI-TR is ideal for a variety of applications such as embedded systems and applications requiring low power memory. It is designed to offer a cost-effective, industry-compatible solution for low-voltage, low-power applications.

Application Field

The IS61WV10248BLL-10TLI-TR is ideal for low power and low voltage systems. It is ideal for battery powered - portable handheld, computers, and telecommunication equipment. The device is also used in a variety of embedded systems, including process control, hand-held data terminals and automotive applications. In addition to its low power consumption and low voltage, the positive edge triggered operation of the IS61WV10248BLL-10TLI-TR allows for easy interfacing with most microprocessors and digital logic.

Working Principle

The IS61WV10248BLL-10TLI-TR utilizes a traditional synchronous memory array architecture that is composed of 1,024Kbits of memory organized as 131,072 words by 8 bits. As a synchronous device, the array is accessed via the rising edge of an external control clock. Its master reset pin is used to reset the device.

A 32-bit external address is multiplexed and decoded to select one of the 131,072 words. When the chip select (CS) is low, the chip selects the addressed word. Data is stored in the selected word. An Output Enable (OE) provides separate read and write cycles. Also, the WE input is used for write control. The device features a high speed random access time of 10ns.

The IS61WV10248BLL-10TLI-TR features bus hold circuit to support daisy chained applications. The bus hold circuit can hold data outputs in their correct states. The device also features a high noise margin and support battery backed applications.

The IS61WV10248BLL-10TLI-TR is also a low power device, consuming less than 1mW of power at low-voltage operation. This low power consumption is achieved by shutting off connections to the bit lines when the device outputs are disabled to reduce quiescent power.

Conclusion

The IS61WV10248BLL-10TLI-TR is an ideal memory solution for low voltage and low power applications. It is a high-density pseudo SRAM device composed of 1,024Kbits of memory organized as 131,072 words by 8 bits. It features a high speed random access time of 10ns and operates from a single +3.0V or +3.3V supply. It is designed to offer a cost-effective, industry-compatible solution for low-voltage, low-power applications. The device is ideal for embedded systems and applications requiring low power memory. It is specifically designed for battery supported applications and is suitable for applications such as portable handheld, computers, and telecommunication equipment.

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