IS61WV12816DBLL-10TLI-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	2Mb (128K x 16)
Write Cycle Time - Word, Page:	10ns
Access Time:	10ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II

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Memory: IS61WV12816DBLL-10TLI-TR Application Field and Working Principle

IS61WV12816DBLL-10TLI-TR is a nonvolatile type of integrated circuit (IC) memory made by Integrated Silicon Solution, Inc. (ISSI). This IC is used in industries and applications such as automotive, aerospace, industrial control, medical, security, and many other devices. It is an ideal choice for embedded systems and other applications that need nonvolatile data storage. The IS61WV12816DBLL-10TLI-TR memory is a low-power, 8-bit SRAM memory with a memory capacity of 16K words. It operates on a single-cycle internal clock and operates at a maximum speed of 25MHz. The SRAM has a Power-Down feature which allows it to operate in a low-power mode and increases its power-saving capabilities. It has a power-on reset (POR) feature which ensures that data is reset upon power-up.The IS61WV12816DBLL-10TLI-TR memory utilizes a 4-bit (quad) organization consisting of 4 x 16K pages of 128 bytes each. Each page can be individually accessed and is divided into four 16 x 16K Pattern Addresses. Accessing each page requires a read/write selection to determine the desired functionality. An extra feature of the IS61WV12816DBLL-10TLI-TR is its enhanced burst mode, which allows multiple data access within a single cycle. This feature is enabled by its contention-free burst counter which allows for higher transfer rates and improved performance. The IS61WV12816DBLL-10TLI-TR memory is a synchronous device that operates on one clock cycle. The device has four main clock cycles, which are perform-read/write, advance-page, reduce-page, and load-page. For a read cycle, the device reads the data located in a specific Pattern Address. This step first requires supplying the command (read or write), followed by the 4-bit address, then by the device\'s \'strobe-in\' signal. This allows the data located in the specified address to be read and stored in the internal address register. For a write cycle, the device supplies the command (read or write), followed by the four-bit address and the data to be written. Next, the \'strobe-in\' signal is activated, which allows the data to be written to the internal address register. Then, the \'begin-write\' signal is activated, which causes the data to be written to the specified Pattern Address.IS61WV12816DBLL-10TLI-TR memory has many applications in embedded systems, automotive, medical and industrial control applications due to its robustness, enhanced burst mode and power saving features. It is a highly reliable non-volatile memory IC, which is ideal for mission-critical applications and for use in harsh environments. It is also suitable for designs needing variable memory capacity, as it offers 4 x 16K words of storage capacity. Finally, the enhanced burst mode feature allows for transfer of multiple data during a single cycle.

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