IS61WV204816BLL-10TLI-TR

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The IS61WV204816BLL-10TLI-TR is a memory device, specifically a 16 Megabit (2 Mbyte) CMOS Dynamic RAM (DRAM) incorporated into a 400-mil SOJ package. It operates with a single 2.5V power supply and is organized into 8 banks of 256K words by 8 bits. It is fabricated using a high performance CMOS process, achieving a high speed read/write operation of up to 133 MHz. Moreover, it has a highly reliable manufacture quality and offers an auto-pre-charge mode to optimize characteristics under different operating conditions.

IS61WV204816BLL-10TLI-TR Application Field

The IS61WV204816BLL-10TLI-TR offers the perfect combination of high-speed performance and low-power benefits. It is suitable for use in notebook PCs and other portable devices operating with a single 2.5V power supply. Additionally, it can be used in networking systems, commercial and industrial applications, embedded applications, and telecommunications. Moreover, it is ideal for other systems requiring high-speed memory.

IS61WV204816BLL-10TLI-TR Working Principle

The IS61WV204816BLL-10TLI-TR DRAM uses a standard DRAM architecture, with a single RAS (row address strobe) line and 8 separate CAS, or column address strobe, lines. It is organized into an array of 8 banks of 256K words, each containing 8 bit locations. RAS and CAS lines select columns and rows within the array, allowing access to individual 8 bit locations. All lines are active-low. On the rising edge of a RAS strobe, one row of the memory array is selected and can be read or written following the assertion of a valid column address. Similarly, on the falling edge of a CAS strobe, one column of the memory array is selected and can be read or written following the assertion of a valid row address. A refresh cycle is also required.

The IS61WV204816BLL-10TLI-TR DRAM has three control pins. The RAS pin is the row address strobe pin that tells the DRAM when to latch a row address. The CAS pin is the column address strobe pin that tells the DRAM when to receive the column address. Finally, the WE pin tells the DRAM when to use the addresses and write/read the data. In addition to these control signals, the DRAM also requires addresses and data signals. These signals are sent from the processor to the DRAM in order to access the information stored in the memory cells.

The IS61WV204816BLL-10TLI-TR DRAM also has an auto-pre-charge mode. This mode is used to optimize the characteristics and data speed of the memory device, depending on specific operating conditions. This mode allows the user to specify a pre-charge operation prior to any RAS or CAS access, so that the data access is fast and reliable.

Conclusion

The IS61WV204816BLL-10TLI-TR is a 16 Megabit (2 Mbyte) CMOS Dynamic RAM (DRAM). It offers the perfect combination of high-speed performance and low-power benefits, making it ideal for notebook PCs and other portable devices, as well as commercial and industrial applications, embedded applications, and telecommunications. It operates with a single 2.5V power supply and is organized into 8 banks of 256K words by 8 bits. Additionally, it has a highly reliable manufacture quality and offers an auto-pre-charge mode to optimize characteristics under different operating conditions. It also uses a standard DRAM architecture, with a single RAS (row address strobe) line and 8 separate CAS, or column address strobe, lines.

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