IS61WV20488BLL-10MLI-TR Allicdata Electronics
Allicdata Part #:

IS61WV20488BLL-10MLI-TR-ND

Manufacturer Part#:

IS61WV20488BLL-10MLI-TR

Price: $ 10.93
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 16M PARALLEL 48MINIBGA
More Detail: SRAM - Asynchronous Memory IC 16Mb (2M x 8) Parall...
DataSheet: IS61WV20488BLL-10MLI-TR datasheetIS61WV20488BLL-10MLI-TR Datasheet/PDF
Quantity: 1000
2000 +: $ 9.92593
Stock 1000Can Ship Immediately
$ 10.93
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (2M x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-miniBGA (9x11)
Description

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The IS61WV20488BLL-10MLI-TR is an advanced memory device that can be used in a variety of applications. It is a static Random Access Memory (SRAM) integrated circuit and is typically used to store data and control information in a variety of application fields. This type of SRAM chip is suitable for use in many computing, industrial and consumer electronic applications such as car navigation systems, security systems, industrial automation, medical imaging and video games.

The IS61WV20488BLL-10MLI-TR is composed of an array of 1,048,576 cells (1,024 Kbits) organized as 512K words (each word being 16 bits). It incorporates an asynchronous architecture and advanced hierarchical design that facilitates quick and easy access to stored data. The asynchronous architecture allows it to operate at any desired speed up to a maximum of 20 MHz. This device also features auto-precharge capability, minimal power consumption and low static standby current.

The IS61WV20488BLL-10MLI-TR works on a read/write cycle with a data width of 16 bits. It is a high performance synchronous SRAM that provides a reliable, economical, and simple solution for many high-speed applications. Its low power consumption and moderate speed make it ideal for mobile applications as well. It has a single in/out pin for data/address along with two control pins, one for chip select and the other for read/write control.

On the functional side, this device offers a number of useful features. These include 5-bit row address and 4-bit column address inputs, data output buffer, static write enable and disable, three-state output enable, low power Standby and active Cycle modes, and on-chip address/data bus latch.

In terms of performance, the IS61WV20488BLL-10MLI-TR provides a reliable, high speed synchronous SRAM with a maximum access time of 15 ns at 8 MHz, 15 ns at 12 MHz, and 20 ns at 20 MHz. It also offers a low power Standby and active Cycle modes. The standby cycle mode provides more time for the device to remain in active mode while consuming less power.

The IS61WV20488BLL-10MLI-TR comprises of an array of 1,048,576 cells that are organized by a hierarchical design with a quick and easy access to stored data. It utilizes a 16-bit data width, low power Standby and active Cycle modes, and on-chip address/data bus latch for improved performance. The asynchronous architecture of this device allows for it to operate at a maximum of 20 MHz. The IS61WV20488BLL-10MLI-TR is ideal for use in a variety of computing, industrial and consumer electronic applications.

The specific data is subject to PDF, and the above content is for reference

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