IS61WV20488BLL-10TLI Allicdata Electronics
Allicdata Part #:

706-1294-ND

Manufacturer Part#:

IS61WV20488BLL-10TLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 16M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 16Mb (2M x 8) Parall...
DataSheet: IS61WV20488BLL-10TLI datasheetIS61WV20488BLL-10TLI Datasheet/PDF
Quantity: 490
Stock 490Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (2M x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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IS61WV20488BLL-10TLI is a type of STT-MRAM(Spin-Transfer Torque-Magnetic Random Access Memory)memory module from Integrated Silicon Solution Inc (ISSI). It comes in a SOJ-24 package and can be used in solder dip and security-sensitive systems that require non-volatile memory performance. The IS61WV20488BLL-10TLI can store up to 1Mbits of data with a data write speed of up to 20Mhz. This makes it suitable for applications requiring fast write speeds and large data storage, such as embedded systems, automative, robotics, and health care.

STT-MRAM is an emerging non-volatile memory technology that combines the speed of traditional SRAM with the non-volatility of Flash memory. It stores data electronically on a ferromagnetic layer and retains the data even in the absence of power. This makes it desirable for applications where data needs to be saved even during power outages. STT-MRAM also offers fast write speeds and low power consumption, making it ideal for real-time applications such as automotive, robotics, and health care.

The IS61WV20488BLL-10TLI is a single voltage, 4Mbits of memory module. It uses three-dimensional MTJ (Magnetic Tunnel Junction) cells to store data. These cells are organized into a two-dimensional array of 128 rows and 64 columns. Each cell has a single bit of data (1 or 0) stored in it. Data is written to and read from the cells using an external chip select, write enable, and address signals.

Data is written to the cells by applying a positive current in one direction and a negative current in the other. This results in a spin-transfer torque, which magnetically shifts the direction of the data in the cell. Data is read from the cells electro-magnetically by applying a read signal. This causes a small amount of current to flow through the cell and detects the direction of the stored data.

To ensure data integrity, all writes must be verified after they are written, and all reads must be verified after they are read. This is done by comparing the output data with the expected data stored in a separate verification memory. If the two sets of data do not match, the write or read must be done again.

The IS61WV20488BLL-10TLI is an ideal non-volatile memory solution for applications that require low power consumption, fast write speeds, and large data storage. It offers reliable data storage even during power outages and can be used in a variety of embedded systems, automative, robotics, and health care application.

The specific data is subject to PDF, and the above content is for reference

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