IS61WV25616BLL-10TL

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The IS61WV25616BLL-10TL memory is an integrated module with a high-density 16M-bit (2 x 8M-bit or 2 x 16M-bit) CMOS static random access memory (SRAM). This memory module offers high performance, fast access times, and high storage densities. This module is highly suitable for application in which high speed and high-density memory is required. It is also suitable for applications requiring efficient use of board space.

The IS61WV25616BLL-10TL is divided into two 4M-bit (2 x 4M-bit or 2 x 8M-bit) banks. Each bank has 16 address lines and 8 data lines. This memory module utilizes a flexible multiplexed address and control bus architecture which can be adapted to numerous system designs. It offers fast read/write times with a cycle rate of 10 ns.

The IS61WV25616BLL-10TL memory is ideal for applications requiring high-performance storage solutions such as networking, embedded systems, and other communication applications. It is also applicable in graphics applications such as graphics cards, monitors, and LCD displays. Furthermore, this memory module is also suitable for multimedia applications such as audio and video editing.

This memory module has several control pins which enable the user to control data operations. These control pins can be used to control chip enable, write enable, and power-down modes. It also features several data control pins such as write-protect, read/write control, and write-protect.

The working principle of the IS61WV25616BLL-10TL memory module involves the use of static random access memory (SRAM). SRAM is a type of memory which stores data in a static form and can be accessed very quickly. When data is written to the memory, it remains in the same state until it is overwritten. Data is retrieved from the memory by using the address pins, and the appropriate data pins are used to write the data at the designated address. The write-enable and chip-enable pins are used to control all write operations to the SRAM.

In summary, the IS61WV25616BLL-10TL memory module is an ideal solution for high-performance, high-density applications. This module offers fast read/write times with a cycle rate of 10 ns, making it suitable for numerous communication and multimedia applications. The memory module also features several control pins to enable the user to control data operations. Finally, the memory utilizes SRAM technology to store data.

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