Allicdata Part #: | IS61WV5128BLS-25TLI-TR-ND |
Manufacturer Part#: |
IS61WV5128BLS-25TLI-TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC SRAM 4M PARALLEL 44TSOP2 |
More Detail: | SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral... |
DataSheet: | IS61WV5128BLS-25TLI-TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 4Mb (512K x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.4 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IS61WV5128BLS-25TLI-TR IC is a versatile memory application that can be used for a wide variety of tasks, including high-speed programmable read only memory (PROM), static random access memory (SRAM), static RAM (S-RAM) and dynamic random access memory (DRAM). This IC is an integrated circuit (IC) device that is designed to provide high-speed memory and data storage.
When coupled with a computer memory controller, the IS61WV5128BLS-25TLI-TR IC is able to handle various types of medium-sized data storage and transfers. It is suitable for storage of large amounts of data and is also considered to be very reliable in terms of uninterrupted data transfers and storage. This IC device is also capable of providing reliable and fast memory access.
The IS61WV5128BLS-25TLI-TR device is commonly used in a wide range of fields, such as aviation, medical, communication and consumer electronics. It is also used in systems where long-term data storage and reliability is of high importance. The IC device can also be used for random access memory (RAM) applications, as well as for storing user data for programmable and other applications.
The IS61WV5128BLS-25TLI-TR device is based on the technology of dynamic random access memory (DRAM). This is one of the most popular memory technologies available today, offering a high level of reliability and capacity, while also providing excellent performance. The features that make DRAM so popular include its ability to store data in larger amounts than other types of memorization and its ability to be refreshed on a regular basis. In addition, DRAM allows for memory access time to be reduced since there is no need to wait for an erase and refresh cycle.
The IS61WV5128BLS-25TLI-TR device also utilizes single transistor memory (STM) technology. STM is an emerging technology that allows for a higher level of integration, allowing for larger data storage and greater speeds. It also offers advanced features such as mirroring, parity, and error correction that can help reduce memory failure and enhance system reliability.
One of the key features of the IS61WV5128BLS-25TLI-TR device is its ability to support multiple data transfers at the same time. This is a very important feature for applications that require the simultaneous storage and transfer of large amounts of data. Because of its high-speed performance and its ability to handle large amounts of data transfers, the IS61WV5128BLS-25TLI-TR device is an ideal choice for many applications that require versatile memory storage solutions.
The IS61WV5128BLS-25TLI-TR device utilizes CMOS technology for its control and data transfer. This means that the IC device can operate at very low power, allowing it to be used in mobile applications where battery life is important. The IS61WV5128BLS-25TLI-TR device also utilizes advanced ECC and parity functionality to further improve data integrity and reliability.
In conclusion, the IS61WV5128BLS-25TLI-TR device is an ideal choice for high-speed programmable read only memory (PROM), static random access memory (SRAM), static RAM (S-RAM) and dynamic random access memory (DRAM) applications. This IC device is capable of providing high-speed memory and data storage along with advanced features such as mirroring, parity, and error correction. In addition, the IC device is energy efficient, which makes it suitable for applications that require long-term data storage and reliable data transfers.
The specific data is subject to PDF, and the above content is for reference
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