Allicdata Part #: | IS61WV6416BLL-12TLI-TR-ND |
Manufacturer Part#: |
IS61WV6416BLL-12TLI-TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC SRAM 1M PARALLEL 44TSOP II |
More Detail: | SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral... |
DataSheet: | IS61WV6416BLL-12TLI-TR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 1Mb (64K x 16) |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 12ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
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Memory plays an important role in a device, such as a computer, as it is a vital component that is used to store information. Among the many different types of memory, IS61WV6416BLL-12TLI-TR might be on that is not familiar to many, yet this type of memory has found applications in a range of important tasks.
IS61WV6416BLL-12TLI-TR is a low-power and high-speed asynchronous SRAM that is primarily used in industrial, medical, security and other surge applications. It can be used in applications that require large storage capacity, such as PC mainboards, graphics cards and handheld devices.
The IS61WV6416BLL-12TLI-TR is a 6-transistor CMOS SRAM with a single power supply, and the chip is rated for 2.0V-3.3V operations. It features an asynchronous SRAM access and multiplexed I/O with a 4-bit wide internal data bus. The chip also offers a clock cycle time of 14/27/54ns with an operating frequency of 18/9/4.5 MHz, respctively.
The IS61WV6416BLL-12TLI-TR uses a single power supply of 3.3V with a low current rating of <750µA for active operation and a low sleep-mode current of <50µA when idle. The I/O interface has 4-lines data input/output and address input,reslt in a burst read and write cycle time of 5ns and 40ns respectively.
The pin-out of the IS61WV6416BLL-12TLI-TR consists of 11 pins: AB0-AB7, DB0-DB3 and VDD. These pins are used to interface with the SRAM. In order to access the data lines, there are 4 control pins: WE (Write enable), OE (output enable), CE (chip enable) and SCK (clock).
The IS61WV6416BLL-12TLI-TR is a simple memory device that works by using a process called asynchronous access. This process works by presenting the guard time in between data transfer and address signal setup. Each transfer of data and address signals activates the corresponding WE, OE, CE and SCK pins, thus allowing the internal SRAM circuit and register to access the data signal on the data line.
Another important feature of the IS61WV6416BLL-12TLI-TR is its self-refresh mode. This enables the chip to automatically enter the self-refresh mode when the VDD supply has been reduced to less than a certain voltage level, thus eliminating the need for external refresh circuits. This feature is essential in reducing the complexity and cost of the device.
The IS61WV6416BLL-12TLI-TR provides an ideal solution for high-speed display applications as its high-speed operation and low-power operation allow it to be used in a variety of applications. Its low-profile package reduces the size of the device and allows for more efficient use of board space. Additionally, its integrated self-refresh mode ensures that the device operates in a reliable state even in low-power conditions. Thus, the device is suitable for use in a variety of hand-held, medical, industrial and other surge applications.
The specific data is subject to PDF, and the above content is for reference
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