IS61WV6416BLL-12TLI

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IS61WV6416BLL-12TLI is a type of synchronous static Random Access Memory (SRAM) that can process logic and multimedia applications for data memory. It is a low-power, high-density memory with a single 50-pin package. SRAMs are characterized by high speed, low power dissipation, small size, low cost, and durability.

Application Field

IS61WV6416BLL-12TLI is used in many different applications because of its many advantages. It is used in embedded systems, cellular phones, PDAs, and other handheld devices. It is also used in digital communication systems and LANs (Local Area Networks). It is also useful in FPGAs (Field Programmable Gate Arrays), ASICs (Application Specific Integrated Circuits), and microprocessors. IS61WV6416BLL-12TLI can also be used in storage systems, automotive systems, and any application requiring high speed, low-power, reliable data storage.

Working Principle

The IS61WV6416BLL-12TLI uses synchronous operation for memory addressing, timing and data access. All memory cycles are initiated by a two-phase clock. The two phases are designated by CKIN and CKOUT. Each phase is used to access different functions that control the read or write process of data. The Read/Write cycle uses the CKIN and CKOUT signals to select the internal array address and data. The data input signals are presented on the data buses (DQ0-7) when WRCLK is low during the CKOUT phase. Data is presented on these pins when the READ signal is low during the CKOUT phase. The data buses can be used for both input and output operations.

IS61WV6416BLL-12TLI chips feature an output enable pin to place its data bus in a high-impedance “Tri-State” condition. This is used to interface to other processors and allows the processor to read from multiple chips without bus contention. There is an input enable pin that prevents data from being written to the chips when activated. It is used for write protection. Lastly, the chip features a write enable pin that causes any data on the data buses to be written to the internally addressed memory cells. This pin is active when LOW.

The IS61WV6416BLL-12TLI chip also offers many other useful features. It has an internal data mask that prevents incorrect write operations. It also has a programmable output data mask and a programmable output data redundancy. The chip also has an address latency and a multiplexed address/data bus. All of these features make the IS61WV6416BLL-12TLI an ideal choice for a variety of memory applications.

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