IS61WV6416DBLL-10TLI-TR

IS61WV6416DBLL-10TLI-TR is an innovative memory design designed mainly for high-speed operation by Integrated Silicon Solution, Inc. It is a powerful 64Kx16 DRAM with an innovative write pre-charge feature.

The IS61WV6416DBLL-10TLI-TR is capable of providing a very high speed performance with a read/write burst length of 4. It uses a single 2.5V supply voltage and has very low power consumption.

This device has two operating modes, the low power CMOS-type mode and the high speed SRAM-type mode. In the CMOS-type mode, only half of the address pins and data pins are used. The SRAM-type mode allows for faster and simpler access to the DRAM array.

The write pre-charge feature improves the write access times. The write pre-charge feature is enabled by the third AC terminal and causes the charge level to be pre-charged before the data is written. This eliminates the need to wait for the data to be written before the next write cycle can begin.

The IS61WV6416DBLL-10TLI-TR has a number of applications in various industries such as consumer electronics, telecommunications, networking and automotive. It is used mainly in memory devices such as mobile phones, digital cameras, digital video players, and laptops.

In consumer electronics, this device is used for communication products, medical, communications and audio equipment. The device is also used for consumer electronic modules such as MP3 players, portable radios and portable televisions. It is also used in memory chips for industrial control, communications and military products.

The device is also commonly used in telecommunications and network applications such as routers, switches and other network products. It is also used in automotive electronics and embedded systems. In these applications, this memory device provides a high density, fast, reliable and cost-effective solution.

The IS61WV6416DBLL-10TLI-TR works by storing two bytes of data in each location, thereby providing 64Kx16 bit storage. It has a programmable column address and row address, which can be accessed to change the data in any location in the device. Each location has read access times of 70ns and write access times of 45ns.

The IS61WV6416DBLL-10TLI-TR has an internal self-refresh feature, which allows it to refresh the data stored in its memory automatically and increase the data retention time. This device also has error correction capability and a refresh counter that enables it to refresh the entire array of cells by sensing the number of times each row of cells and column of cells has been read.

The IS61WV6416DBLL-10TLI-TR is an innovative memory design that provides high speed, low power operation, and efficient operation. It is a perfect choice for applications in a variety of industries where speed, reliability, and cost-efficiency are essential.