IS61WV6416EEBLL-10TLI Allicdata Electronics
Allicdata Part #:

IS61WV6416EEBLL-10TLI-ND

Manufacturer Part#:

IS61WV6416EEBLL-10TLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 1M PARALLEL 44TSOP2
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: IS61WV6416EEBLL-10TLI datasheetIS61WV6416EEBLL-10TLI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Description

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Memory is essential for the operations of electronic devices, microprocessors, and computers. It stores the data for quick access and acts as the queue during processing. IS61WV6416EEBLL-10TLI is an example of contemporary memory chips. This article discusses the application field and working principle of this type of memory chip.

IS61WV6416EEBLL-10TLI is a low power SRAM memory chip available in TSOP package with two power modes: standby mode and normal operation mode. It is suitable for many kinds of applications such as data storage, communication systems, and gaming. The chip features an asynchronous interface, which allows it to operate independently of a system clock or any external device. It also boasts a pin count of 42, which is fairly low compared to other SRAM chips used for the same applications.

The chip is composed of 64k x 16 (64 kilobyte) bits of SRAM cells arranged in a two-dimensional array. It is composed of four memory arrays of transistors, each of which comprises a single row of 16 rows and 64 columns of SRAM cells. Each row can be accessed in one clock cycle while all the four arrays together can be accessed in four clock cycles. This architecture ensures a low power consumption as each memory cell uses only one clock cycle for activation and one clock cycle for access.

The working principle of IS61WV6416EEBLL-10TLI can be summarized as follows. It uses a static RAM (SRAM) architecture, which stands for synchronous random access memory. This memory architecture uses a continuous clock cycle to keep its data stored. When the clock cycle is off, the SRAM cells retain their data. This enables them to be used as a unified memory unit, capable of storing and retrieving data quickly. Additionally, it uses multiplexing techniques to enable multiple addressing of the same memory location.

The chip has a data bus width of 16 bits. Data is transferred in and out of the memory using this bus width. Additionally, since it is an asynchronous SRAM it can be used in asynchronous designs. This makes the chip suitable for a variety of applications, such as embedded systems, data exchange, and games.

In conclusion, IS61WV6416EEBLL-10TLI is a low power SRAM memory chip. It is suitable for applications such as data storage, communication systems, and gaming. Its working principle is based on a static RAM architecture, which allows multiple addressings of the same memory location. Additionally, it features a data bus width of 16 bits and can be used in asynchronous designs. This makes the chip suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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