IS62WV5128BLL-55T2LI Allicdata Electronics
Allicdata Part #:

706-1115-ND

Manufacturer Part#:

IS62WV5128BLL-55T2LI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4M PARALLEL 32TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: IS62WV5128BLL-55T2LI datasheetIS62WV5128BLL-55T2LI Datasheet/PDF
Quantity: 1530
Stock 1530Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package: 32-TSOP II
Description

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Memory

IS62WV5128BLL-55T2LI application field and working principle

IS62WV5128BLL-55T2LI is a type of volatile memory known as static RAM (SRAM). It is a type of semiconductor memory that can be used in general-purpose applications and embedded systems. SRAM is a form of random-access memory (RAM) that saves data by using transistors to store information temporarily.

SRAM is high-speed, low-power memory that offers fast access times but is more expensive than other forms of semiconductor memory. The IS62WV5128BLL-55T2LI is a medium-density SRAM that offers very fast access times compared to DRAM, which is the most commonly used memory device in commercial and consumer applications. The IS62WV5128BLL-55T2LI is most often used in applications where a fast response time is important, such as processors, embedded systems, gaming consoles, and industrial automation.

The IS62WV5128BLL-55T2LI uses asynchronous SRAM technology to store data. Data is stored in the SRAM memory by cells that use two pairs of transistors. The number of pairs of transistors used in each cell depends on the memory density. The IS62WV5128BLL-55T2LI has eight transistors in each cell.

The IS62WV5128BLL-55T2LI uses memory cells that are divided into rows and columns. Data is written to the memory cells by charging and discharging the transistors in the cells and sensing the current. Data is read from the cells by sensing the stored charge in the cells. The memory cells of the IS62WV5128BLL-55T2LI can store two bits of information per cell. The memory cells of the IS62WV5128BLL-55T2LI are arranged in a 16,384 by eight-bit array. This means that the IS62WV5128BLL-55T2LI has a capacity of 131,072 bits of data.

The IS62WV5128BLL-55T2LI is a high-speed memory device with a fast access time. The device has an access time of 55ns, which makes it suitable for processor- and controller-based applications. The device also has low static and dynamic power requirements, making it well-suited for low-power applications.

The IS62WV5128BLL-55T2LI is a reliable memory device with an advanced error-checking and correction system. The device can detect single-bit errors in the data stored in the memory cells and can automatically correct them. This makes the IS62WV5128BLL-55T2LI ideal for applications that require high reliability, such as communication systems.

In conclusion, the IS62WV5128BLL-55T2LI is a high-performance, low-power, and reliable memory device. The device is well-suited for processor- and controller-based applications, embedded systems, industrial automation, gaming consoles, and communication systems that require a fast response time and high reliability.

The specific data is subject to PDF, and the above content is for reference

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