IS62WV5128EBLL-45T2LI Allicdata Electronics
Allicdata Part #:

706-1545-ND

Manufacturer Part#:

IS62WV5128EBLL-45T2LI

Price: $ 2.37
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4M PARALLEL 32TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: IS62WV5128EBLL-45T2LI datasheetIS62WV5128EBLL-45T2LI Datasheet/PDF
Quantity: 500
1 +: $ 2.14830
10 +: $ 1.95048
25 +: $ 1.90840
50 +: $ 1.89769
100 +: $ 1.70188
250 +: $ 1.69555
500 +: $ 1.63311
1000 +: $ 1.55267
Stock 500Can Ship Immediately
$ 2.37
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package: 32-TSOP II
Description

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The IS62WV5128EBLL-45T2LI is a member of the ISSI (Integrated Silicon Solutions Inc.) synchronous static random access memory (SRAM) family. This type of memory plays an important role in a variety of electronic applications, from digital signal processors (DSPs) and microcontrollers to mobile telecommunications and automotive devices. As a memory device, the IS62WV5128EBLL-45T2LI is a great choice for embedded applications such as digital signal processing, networking, telecommunications, and medical imaging and diagnostics.

The IS62WV5128EBLL-45T2LI has a wide operating temperature range of -40°C to +85°C and is designed to operate with a single 3.3V to 4.5V power supply. The device is available in an SOJ-28 package configuration, with a maximum access time of 35ns. This fast access time makes the IS62WV5128EBLL-45T2LI especially suitable for time-critical applications. The device has a full duplex synchronous burst read capability, allowing for higher data throughput at lower power consumption. The IS62WV5128EBLL-45T2LI provides up to 8 megabits of memory with a high data rate of up to 83 MHz.

The IS62WV5128EBLL-45T2LI is a non-volatile static random access memory that features static electrical erasability and programmability. The device is built with an advanced CMOS process and consists of an array of 4,194,304 non-volatile, single transistor memory cells. The memory cells are arranged in a “daughter board” configuration with a single row of cells and three columns of 16 bits each, forming a 512Kx 16 synchronous static RAM array. The device is capable of delivering up to 8 megabits of data with a high-speed read cycle of 40 MHz.

The IS62WV5128EBLL-45T2LI is designed for multiple application fields, including consumer electronics, medical, industrial, and automotive. In consumer electronics, the device is compatible with a variety of portable memory cards, from Compact Flash to Secure Digital, offer rapid data transfer rates. This combination of fast access times and high capacity make it an ideal choice for digital cameras and other handheld electronic devices. In medical applications, the device is also highly suitable, providing a reliable method of data storage and transfer in medical systems such as medical imaging and diagnostics.

The precise working principles of the IS62WV5128EBLL-45T2LI begin with data transfer. To transfer data, user inputs are converted to digital code and sent to the SRAM array. As the data is sent, a read/write signal is generated and sent to the memory array. This read/write signal causes the data to be read or written. During each read and write cycle, the number of address bits and the data sent and received are different. This is done to ensure data accuracy, while also limiting the amount of data sent in a single read or write operation.

The IS62WV5128EBLL-45T2LI is designed to operate in a system environment with an asynchronous or synchronous external clock. When operating with an asynchronous system, the memory device relies on the synchronization of the data bus for data transfers. When the device is operating with a synchronous system, the external clock signal is used to control the read and write operations of the memory device. The clock signal is used to sample the data on the data bus and to control the read/write of the memory array.

The IS62WV5128EBLL-45T2LI has two specific pin functions. The data input/output (DI/DO) pins are used for data transfer and the chip enable (CE) pins are used for multiplexing control. Data transfer is controlled by an external write/read control signal, which is sent to the device via the CE lines. When this write/read signal is asserted, data is exchanged between the device and the external data bus. The device also contains an array of signal pins which the user can configure for multiplexing.

The IS62WV5128EBLL-45T2LI is an ideal choice for embedded applications that demand high performance and reliability. The device offers a high storage capacity, fast access times, and a wide range of temperature operation, all within a small form factor. As a non-volatile static random access memory, the IS62WV5128EBLL-45T2LI is able to provide reliable data storage and transfer while also consuming minimal power. With its rich feature set, the device is well-suited for multiple application fields, including consumer electronics, medical, industrial, and automotive.

The specific data is subject to PDF, and the above content is for reference

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