IS62WV51216BLL-55BLI Allicdata Electronics
Allicdata Part #:

706-1113-ND

Manufacturer Part#:

IS62WV51216BLL-55BLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 8M PARALLEL 48MINIBGA
More Detail: SRAM - Asynchronous Memory IC 8Mb (512K x 16) Para...
DataSheet: IS62WV51216BLL-55BLI datasheetIS62WV51216BLL-55BLI Datasheet/PDF
Quantity: 794
Stock 794Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-miniBGA (7.2x8.7)
Description

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IS62WV51216BLL-55BLI is a type of memory, and it is primarily used in a wide range of applications, such as embedded systems, home gateways, set top boxes and automotive. As a type of memory, IS62WV51216BLL-55BLI is able to store and retain data even when electricity is turned off, meaning that the data stored within is able to retain over long periods of time.

In particular, IS62WV51216BLL-55BLI is a low-power 512K x 16 bit CMOS Static RAM memory. It is typically comprised of an SRAM core and a single Vcc supply regulator used for powering the circuits. In addition to this, it also includes an optional Vee building block, which can be used to control the operating temperature range.

IS62WV51216BLL-55BLI is designed to possess the utmost flexibility and compatibility. It is designed to perform both low-power and high-speed operations, alongside being capable of handling heavy system traffic and offering superior data access times. As such, it is widely regarded as being one of the most reliable and cost conscientious kinds of DRAM memory.

In terms of its working principle, IS62WV51216BLL-55BLI operates as a typical SRAM unit. SRAM is a type of volatile memory, storing data as data is written in and out, meaning that when power is lost all of the stored data is then lost. SRAM occurs in the form of a capacitor build, where the state of the capacitor is used to represent the binary data of 0 and 1. The main difference between the regular DRAM and IS62WV51216BLL-55BLI is that it states data quickly, as it is not required to be regularly refreshed.

IS62WV51216BLL-55BLI is highly popular, and it is primarily used in mobile and embedded applications. Its compact size and low power consumption make it especially suitable for these kinds of applications, alongside being capable of common memory operations such as write, read, write-protect and auto-increment data addressing. In addition to its memory function, it also includes an additional transaction control signal capability, allowing for conversion of the SRAM-controlled data sets into a fully addressable interface.

IS62WV51216BLL-55BLI is particularly praised for its low power consumption. Power consumption is kept to a minimum, with very low voltage applications being enabled by its particular construction process. Furthermore, its standby current is rated at a very low level of 5μA, with its active current rated at 2mA max. This makes it well-suited for handheld and portable devices, where energy is a premium.

Overall, IS62WV51216BLL-55BLI is a type of memory and is primarily used in a wide range of applications. It offers low-power 512K x 16 bit CMOS Static RAM memory and is designed to perform both low-power and high-speed operations. It possesses the utmost flexibility and compatibility, with its low power consumption especially suiting mobile and embedded applications. In terms of its working principle, IS62WV51216BLL-55BLI operates as a typical SRAM unit and is able to store and retain data even when electricity is turned off, making it one of the most reliable and cost conscientious kinds of DRAM memory.

The specific data is subject to PDF, and the above content is for reference

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