IS62WV6416BLL-55TLI-TR Allicdata Electronics

IS62WV6416BLL-55TLI-TR Integrated Circuits (ICs)

Allicdata Part #:

IS62WV6416BLL-55TLI-TR-ND

Manufacturer Part#:

IS62WV6416BLL-55TLI-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 1M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: IS62WV6416BLL-55TLI-TR datasheetIS62WV6416BLL-55TLI-TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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The IS62WV6416BLL-55TLI-TR is a 16 megabit (2 megabyte) CMOS Static RAM organized as 4,194,304 words by 8 bits. It is offered in industry-standard 44-pin plastic L-T-R 2x22-lead or 10 mm x 10.5 mm Thin Small Outline Package (TSOP II). It is ideal for high reliability, low-power, high-performance applications. The IS62WV6416BLL-55TLI-TR\'s improved system performance and reliable operation are due primarily to its low active current, high speed, and advanced comer hermetic packaging process.

The IS62WV6416BLL-55TLI-TR is an example of a type of memory component called Static RAM, or SRAM. SRAM has historically been used to provide memory for applications requiring large amounts of very fast storage. SRAM is ideal for applications in which fast read and write times are essential and reliability is necessary. SRAM, in contrast to other types of memory, does not require refreshing and is non-volatile. This makes it an ideal component for applications where very fast random access times are required and reliability is a factor.

SRAM consists of a number of memory cells, typically MOSFETs, that store bits of data, or words. The number of memory cells determines the memory capacity of the SRAM. The IS62WV6416BLL-55TLI-TR is an example of a 16 megabit, or 2 megabyte, SRAM. Each memory cell consists of six bi-directional transistors, along with some additional circuitry for controlling access, timing, and other functions. When a row and column of the SRAM is addressed, the data stored in that cell is read.

The IS62WV6416BLL-55TLI-TR is specifically designed for high-performance applications that require low power, high-reliability, and fast access times. It is ideal for applications such as telecommunications, networking, and embedded systems. For embedded systems, the IS62WV6416BLL-55TLI-TR can provide a high amount of fast cache memory, providing performance gains compared to other types of memory.

The IS62WV6416BLL-55TLI-TR is specifically designed for use in finely tuned circuits that require precise timing. This is because the IS62WV6416BLL-55TLI-TR uses a very low active current, allowing it to maintain high speed and low power consumption. In addition, the SRAM is packaged in a hermetic comer package, which provides ruggedness and high reliability for a wide range of applications.

All in all, the IS62WV6416BLL-55TLI-TR is an excellent choice for any application that requires high-performance and low-power memory. Its advanced packaging and low power consumption make it ideal for use in embedded systems, telecommunications, and networking applications. With its low active current, high speed, and ruggedness, it is sure to provide reliable performance in some of the most demanding environments.

The specific data is subject to PDF, and the above content is for reference

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