ISL6605CBZR5168

Current - Peak Output (Source, Sink):	2A, 2A
Base Part Number:	ISL6605
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 125°C (TJ)
Rise / Fall Time (Typ):	8ns, 8ns
High Side Voltage - Max (Bootstrap):	33V
Input Type:	Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	1V, 2V
Voltage - Supply:	4.5 V ~ 5.5 V
Gate Type:	N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Synchronous
Driven Configuration:	Half-Bridge
Part Status:	Obsolete
Packaging:	Tube

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Introduction to ISL6605CBZR5168

The ISL6605CBZR5168 is a low-side gate driver with a sophisticated level shifter, three integrated low-voltage level-shifting transistors, and two low-voltage level-shifting diodes. It is specifically designed to accurately drive MOSFETs and IGBTs in high-current applications. Its integrated level-shifting MOSFETs and power diodes allows easy interface between high- and low-voltage rails, eliminating additional level shifters, BJTs, and MOSFETs for lower component count and improved efficiency.The ISL6605CBZR5168 operates over a wide temperature range from -40°C to +125°C and is a high-reliability, cost-effective low-side gate driver solution. The integrated level shifters, MOSFETs, and power diodes provide excellent noise immunity and low-voltage consumption. The low-side gate driver also provides built-in on-chip power sequencing, over-voltage protection, and under-voltage protection, ensuring robustness and reliability.

Applications Of ISL6605CBZR5168

The ISL6605CBZR5168 low-side gate driver is optimized for driving high power IGBTs and MOSFETs at 6V to 24V. Typical applications include: •Motor Control: The ISL6605CBZR5168 is suitable for driving IGBTs and MOSFETs in motor control applications such as AC and DC motor drives, solenoid actuators, and robot motors.•Power Management: The low-side gate driver is designed to drive MOSFETs and IGBTs in power management applications such as DC-DC converters, switched-mode power supplies, and point-of-load converters.•Solar Power: Solar power systems, including solar modules and solar inverters, require accurate gate driver solutions to ensure efficient operation and long interver lifetimes. The ISL6605CBZR5168 provides the necessary accuracy and robustness for such applications.

Working Principle of ISL6605CBZR5168

The ISL6605CBZR5168 utilizes an advanced level-shifting technique to accurately drive high-power MOSFETs and IGBTs. When the input voltage is lower than its output voltage, it uses an internal transition NMOS transistor as a pull up, charging the output node to the logic high voltage. When the input voltage is higher than the output voltage, a parasitic diode body diode will forward bias, discharging the output node to logic low voltage.The internal pull up and body diode are supplemented by external level-shifting transistors and diodes. The level shifter transistors allow the output voltage to exceed the input voltage, allowing the high-side MOSFET of a half bridge to be driven when the input voltage is lower than the gate-source voltage. The level shifting diodes protect the IC from over-voltage on the high-side of the half-bridge when the input voltage exceeds the gate-source voltage.

Conclusion

The ISL6605CBZR5168 low-side gate driver integrates a sophisticated level shifter and three integrated level-shifting MOSFETs and two low-voltage level-shifting diodes. It allows easy interface between high- and low-voltage rails without requiring additional level shifters, BJTs or MOSFETs, reducing component count and increasing efficiency. It is optimized for driving 6 to 24V IGBTs and MOSFETs and is suitable for motor control, power management, and solar power systems. The low-side gate driver also provides on-chip power sequencing, over-voltage protection and under-voltage protection, ensuring robustness and reliability.

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