ISL6613AEIB Allicdata Electronics
Allicdata Part #:

ISL6613AEIB-ND

Manufacturer Part#:

ISL6613AEIB

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC MOSFET DRVR SYNC BUCK 8EPSOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC-EP
DataSheet: ISL6613AEIB datasheetISL6613AEIB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 1.25A, 2A
Base Part Number: ISL6613AE
Supplier Device Package: 8-SOIC-EP
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 26ns, 18ns
High Side Voltage - Max (Bootstrap): 36V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 10.8 V ~ 13.2 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tube 
Description

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ISL6613AEIB is a high-performance Tri-level Gate Driver IC designed to facilitate the commutation of power in 3-Level Converters. It is manufactured by Intersil Corporation, a global leader in power management, analog integration and system solutions. ISL6613AEIB is a Tri-level Gate Driver with a wide range of features, making it ideal for applications demanding high-current, high-voltage and low-power solutions. This device is widely used in a variety of power applications, such as Power Factor Correction (PFC), DC/DC converters, Switch Mode Power Supplies (SMPS) and Digital Power Supplies.

ISL6613AEIB is designed to drive 6 NMOS FETs/IGBTs in the standard half-bridge configuration, allowing for fast switching of the power converter. The device has a high-speed, low-charge time gate driver, capable of driving large IGBTs with very low switching losses. The device has four control pins, allowing for greater flexibility in the implementation of a variety of power converter solutions.

To ensure reliable operation, the ISL6613AEIB is designed with over-voltage, over-current, under-voltage and thermal protection features. The device also features short-circuit and short-circuit voltage protection. The device also has an input voltage range of 3V to 30V, making it suitable for a variety of applications.

The operating principle of the ISL6613AEIB is based on the control of the gate voltage of the six NMOS FETs/IGBTs connected to the device. The gate voltage of the IGBTs is controlled by measuring the current flowing through the associated channel. When the voltage is too high, the device reduces the current so that the voltage drops. Conversely, when the voltage is too low, the device increases the current until the desired value is achieved.

ISL6613AEIB can be used in a variety of power applications, including solar and wind energy, uninterruptible power supplies (UPS), and automotive systems. The device can also be used in horticultural lighting systems, and in industrial automation, robotics, aerospace and military applications. The device is also suitable for LED lighting systems, motor control applications and precision measurements.

The ISL6613AEIB is an ideal choice for power applications demanding high-current, high-voltage and low-power solutions. The device has a wide range of features, including over-current, under-voltage, thermal and short-circuit protection, making it a reliable, high-performance and cost-effective solution for power application engineers.

The specific data is subject to PDF, and the above content is for reference

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