ISL6613IR Allicdata Electronics
Allicdata Part #:

ISL6613IR-ND

Manufacturer Part#:

ISL6613IR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC MOSFET DRVR SYNC BUCK 10-DFN
More Detail: Half-Bridge Gate Driver IC Non-Inverting 10-DFN (3...
DataSheet: ISL6613IR datasheetISL6613IR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 1.25A, 2A
Base Part Number: ISL6613
Supplier Device Package: 10-DFN (3x3)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 26ns, 18ns
High Side Voltage - Max (Bootstrap): 36V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 10.8 V ~ 13.2 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tube 
Description

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The ISL6613IR is a high-performance integrated circuit designed for power management applications. It is an integrated half-bridge gate driver, capable of driving a variety of power devices with minimal external components. This device can be used to drive two N-channel power MOSFETs for a variety of applications in power management, such as DC-DC converters, motor controllers, and other power switching circuits.

The ISL6613IR is a very versatile integrated device, suitable for a wide range of applications. It is capable of driving a variety of loads such as MOSFETs, IGBTs, bipolar transistors, and simple resistive loads. It also has built-in protection features such as overcurrent and overtemperature protection. This makes it a great option for applications that require cost-effective, reliable gate driving.

The ISL6613IR is a high-performance, low-power CMOS device with many features to improve power and EMI performance. It features a dual-phase half-bridge gate driver with separate inputs for upper and lower FETs. It also features a high-side bootstrap circuit to provide the proper voltage level for the upper FETs. This gives it an operating voltage range from 3.3V to 45V, and a maximum output current of 2A peak.

The ISL6613IR features undervoltage lockout (UVLO) and current-limit protection to protect the device from overload. It also has thermal shutdown protection to prevent damage from overheating. This protection is designed to prevent excessive current or temperature from damaging the device, thus ensuring a long and reliable operating life.

The ISL6613IR is used in a number of different power management applications. It is well-suited for DC-DC converters, motor controllers, battery management systems, and other power switching applications. It can be used to drive N-channel power MOSFETs or IGBTs, making it a versatile solution for many different applications. Additionally, its high-side bootstrap feature makes it ideal for applications that require a wide operating voltage range.

In summary, the ISL6613IR integrated circuit is a versatile, reliable device designed for power management applications. It is capable of driving two N-channel power MOSFETs for a variety of applications in power management. It features a dual-phase half-bridge gate driver, undervoltage lockout, current-limit protection, and thermal shutdown protection. It is also highly suitable for DC-DC converters, motor controllers, battery management systems, and other power switching applications. This makes it an ideal choice for a wide range of applications requiring robust, reliable gate driving.

The specific data is subject to PDF, and the above content is for reference

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