ISL9N303AP3 Allicdata Electronics
Allicdata Part #:

ISL9N303AP3-ND

Manufacturer Part#:

ISL9N303AP3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 75A TO-220AB
More Detail: N-Channel 30V 75A (Tc) 215W (Tc) Through Hole TO-2...
DataSheet: ISL9N303AP3 datasheetISL9N303AP3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 215W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V
Series: UltraFET™
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The ISL9N303AP3 is a single N-Channel MOSFET designed for power control applications that require high efficiency, low on-resistance, and high current handling capabilities. It is a vertical double-diffused MOSFET with two independent power control paths, with one path controlling the low-side and the other controlling the high-side. This makes it ideal for applications such as motor control, solar inverters, and LED lighting.

The ISL9N303AP3 has an integrated overcurrent protection (OCP) to ensure efficient operation and to reduce system complexity. This MOSFET has a very low on-resistance of 0.1 Ω, leading to excellent power loss and reduced heat. It also has a very low gate charge of 1.3 nC, so it can be quickly powered up and down, making it ideal for high efficiency, high speed switching applications.

In terms of its operation, the ISL9N303AP3 is a partially depleted, vertical double-diffused metal–oxide–semiconductor field-effect transistor (VDMOS FET) and it operates in the enhancement mode. It is fabricated using trench gate technology, and its gate is insulated from the drain by a layer of silicon dioxide that is formed by a double oxidation process.

The ISL9N303AP3 is designed primarily for power control applications, such as motors, solar inverters, and LED lighting. It has very low on-resistance, high current-handling capability, and integrated overcurrent protection, making it suitable for applications that require high efficiency and high speed switching. It is also well-suited to many other types of power electronic applications, such as power supplies and DC/DC converters.

The ISL9N303AP3’s low on-resistance, high current handling ability, and integrated overcurrent protection make it an attractive choice for many applications. Its low gate charge allows for fast switching and high efficiency, making it suitable for high speed applications. Its integrated overcurrent protection helps to reduce system complexity and provides an additional layer of protection against overcurrent conditions. In addition to its power control applications, the ISL9N303AP3 can be used in a variety of other power electronic applications as well.

The specific data is subject to PDF, and the above content is for reference

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