Allicdata Part #: | IX2A11P1-ND |
Manufacturer Part#: |
IX2A11P1 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | IXYS |
Short Description: | IC DRVR HALF BRIDGE GATE 8DIP |
More Detail: | Gate Driver IC 8-PDIP |
DataSheet: | IX2A11P1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Driven Configuration: | -- |
Channel Type: | -- |
Gate Type: | -- |
Voltage - Supply: | -- |
Logic Voltage - VIL, VIH: | -- |
Current - Peak Output (Source, Sink): | -- |
Input Type: | -- |
Rise / Fall Time (Typ): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Supplier Device Package: | 8-PDIP |
Base Part Number: | IX2*11 |
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IX2A11P1 is a two-channel gate drive IC for MOSFETs and IGBTs. It is designed to operate in a wide range of voltages and currents, from 30V to 6A. The device is capable of providing up to 2A of bipolar current drive in each channel. It is ideal for applications that require high efficiency, low power loss and accurate voltage regulation.
The IX2A11P1 gate drive IC is typically used in automotive, industrial and consumer applications. It is a perfect solution for applications requiring accurate voltage regulation, low power dissipation and high efficiency. In automotive applications, it is typically used to drive powertrain systems such as engines, transmissions and drivelines. It is also suitable for industrial inverters and motor drivers, as well as consumer home appliances, such as air conditioners, refrigerators and dishwashers.
The IX2A11P1 gate drive IC features four operating modes that allow it to operate in synchronous, phase-shifted, full-bridge, and half-bridge configurations. In synchronous mode, the device switches both MOSFETs in each phase simultaneously. In phase-shifted mode, one MOSFET is switched in each phase with a adjustable offset. This allows for an optimized switching waveform for improved efficiency and reduced noise. In full-bridge mode, both MOSFETs in each phase are switched in sequential fashion, which is known as resonance mode, and it is typically used to drive an output inductor for increased efficiency. In half-bridge mode, only one MOSFET is switched per phase.
The IX2A11P1 gate drive IC is also equipped with advanced protection features such as overvoltage protection (OVP) and undervoltage protection (UVP). The OVP and UVP features protect the device from voltage spikes or drops that may occur in the application. Additionally, the device features short-circuit protection, over-current protection and thermal shutdown protection. These features help to increase performance and reliability of the device.
The IX2A11P1 gate drive IC also has a low power consumption of only 4.3mW, making it an optimal choice for applications that require high efficiency and low power loss. Additionally, the device features low output capacitor delay and high speed switching, allowing it to achieve high switching frequencies.
In summary, the IX2A11P1 gate drive IC is a perfect choice for automotive, industrial and consumer applications that require accurate voltage regulation, low power dissipation and high efficiency. It has many advanced protection features, low power consumption and fast switching speeds, making it ideal for high performance designs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IX2A11P1 | IXYS | 0.0 $ | 1000 | IC DRVR HALF BRIDGE GATE ... |
IX2A11S1 | IXYS | 0.0 $ | 1000 | IC DRVR HALF BRIDGE GATE ... |
IX2A11S1T/R | IXYS | 0.0 $ | 1000 | IC DRVR HALF BRIDGE GATE ... |
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