IXGH20N120BD1

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The IXGH20N120BD1 is an IGBT (insulated gate bipolar transistor) with a single diode characterized for low conduction and low switching losses. This type of transistor offers the advantage of high input impedance with fast switching capabilities and excellent thermal stability. This device is suited for a broad range of applications such as motor control, lighting control, welding, and solar applications.

Application Field

IXGH20N120BD1 is suitable for many power electronic application, such like motor control, lighting control, welding and Solar panels. Motor control applications are the most common, its features like high switching frequency and high speed switch-on behavior make it perfect for AC or DC brushless motors drive. Light controlling is another field, the IXGH20N120BD1 allow to vary or switch the power necessary to lighting loads. This device also could be applied in fast switches high power on-off control or pulsed operation. Finally, Solar power applications benefit from this type of transistor by its operation behaviour and the technology used, achieving an efficient conversion from photovoltaic current to the power reference.

Working Principle

A typical IGBT structure is a cross between a metal oxide semiconductor field effect transistor (MOSFET) and a bipolar junction transistor (BJT). The basic features of IGBTs are their fast switching capability, high input impedance and good level of integration. Although they require a separate gate driver compared to the MOSFETs, an IGBT can usually be switches within tens of nanoseconds, allowing it to be used in higher frequency operation up to several MHz if needed. For IXGH20N120BD1 the switch time can be as fast as 5 microseconds.

The gate of the device is isolated from the drain and collector regions by a thin silicon dioxide layer. This system eliminates the need for a direct current connection to the gate, which is necessary for the BJTs, providing an easier handling of the device. Depending on the input voltage applied to its gate the IXGH20N120BD1 could be in its ON or OFF state. The output drain current will be determined by a linear conduction factor, which is represented by the transistor\'s “Hfe”. After a current is established, its running can be controlled by varying the gate voltage.

One of the features of IGBTs is the so called freewheeling diode. When the transistor is switched OFF and the current load is still present, a so called reverse recovery phenomenon occurs. This can result in an immense power loss. The freewheeling diode built into IXGH20N120BD1 eliminates this power loss to about 200 nano-ohms for the IXGH20N120BD1, which is relatively low compared to other transistors.

The IXGH20N120BD1 is characterized for low conduction and low switching losses. In smoothing applications, where the transistor is used to regulate the output voltage, the conductive losses can be neglected. As for switching, the losses are generally reduced with a low Eon/Eoff value, meaning a small voltage drop because of the gate turn-on or -off.

Additionally, due to their high input impedance and fast switching times, IGBTs can work efficiently in voltage control circuits, controlling the phase shift of an inductive load. This feature is widely used in power applications, such as AC and DC motors.

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