IXGH10N170A Allicdata Electronics
Allicdata Part #:

IXGH10N170A-ND

Manufacturer Part#:

IXGH10N170A

Price: $ 4.09
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1700V 10A 140W TO247
More Detail: IGBT NPT 1700V 10A 140W Through Hole TO-247AD (IXG...
DataSheet: IXGH10N170A datasheetIXGH10N170A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 3.71574
Stock 1000Can Ship Immediately
$ 4.09
Specifications
Power - Max: 140W
Base Part Number: IXG*10N170
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 850V, 10A, 22 Ohm, 15V
Td (on/off) @ 25°C: 46ns/190ns
Gate Charge: 29nC
Input Type: Standard
Switching Energy: 380µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A
Current - Collector Pulsed (Icm): 20A
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 1700V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Introduction: IXGH10N170A

IXGH10N170A is a C&I 95/90 CVM Series NPT IGBT module. It is a ultra low loss IGBT module which is designed to meet or exceed the rigorous quality and performance requirements of various industrial and consumer applications. This device is suitable for drives, servo motors and many other applications requiring low switching losses and high frequencies.

Application Field of IXGH10N170A

IXGH10N170A is mainly used in the applications such as solar power systems, medical instruments, industrial electronics, automotive and other general purpose applications. The IXGH10N170A features fast switching, low conduction losses and good thermal capabilities when compared to other IGBTs. In addition, the IXGH10N170A has lowOn-state losses, fast IGBT switching operation and high power density.

Working Principle of IXGH10N170A

The working principle of the IXGH10N170A involves the use of a gate threshold voltage and gate turn-off voltage. When a gate voltage is applied to the IGBT gate (V gt ), a thin layer of C&I 95/90 CVM Series NPT IGBT module is formed between the gate and the drain source. This thin layer increases the electric field between the gate and the drain source. This electric field allows current to flow from the gate to the drain source. As the gate voltage increases, the thin layer between the gate and the drain source is thinned and the electric field increases. This increases the current flow rate and the current flow rate is controlled by the gate voltage, Vgt.

The gate turn-off voltage of the IXGH10N170A is also determined by the gate voltage and the drain source voltage. When the gate voltage reduces below the gate turn-off voltage, the gate to drain source voltage drops to zero and the current flow from the gate to the drain source stops. This allows the IGBT to switch off reliably and quickly.

The IXGH10N170A has protection against short-circuits and overvoltages. The short-circuit and overvoltage protection consists of emitter-controlled, high-speed, adjustable current limiting and voltage dependent protection. This protects the device against overcurrent, overvoltage, temperature and reverse bias.

Conclusion

The IXGH10N170A is an ultra low loss IGBT module which is suitable for applications that require low switching losses, fast switching and high frequencies. The IXGH10N170A features good thermal capabilities when compared to other IGBTs and low on-state losses, fast IGBT switching operation and high power density. In addition, the IXGH10N170A has protection against short-circuits and overvoltages due to its emitter-controlled, high-speed, adjustable current limiting and voltage dependent protection.

The specific data is subject to PDF, and the above content is for reference

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