IXGH48N60B3D1 Allicdata Electronics
Allicdata Part #:

IXGH48N60B3D1-ND

Manufacturer Part#:

IXGH48N60B3D1

Price: $ 4.22
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 300W TO247
More Detail: IGBT PT 600V 300W Through Hole TO-247AD (IXGH)
DataSheet: IXGH48N60B3D1 datasheetIXGH48N60B3D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 4.22000
10 +: $ 4.09340
100 +: $ 4.00900
1000 +: $ 3.92460
10000 +: $ 3.79800
Stock 1000Can Ship Immediately
$ 4.22
Specifications
Switching Energy: 840µJ (on), 660µJ (off)
Base Part Number: IXG*48N60
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 100ns
Test Condition: 480V, 30A, 5 Ohm, 15V
Td (on/off) @ 25°C: 22ns/130ns
Gate Charge: 115nC
Input Type: Standard
Series: GenX3™
Power - Max: 300W
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Current - Collector Pulsed (Icm): 280A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGH48N60B3D1 is an Insulated Gate Bipolar Transistor (IGBT) developed and manufactured by Infineon Technologies. It belongs to the Single series, which is a range of IGBTs with the same package size, gate charge and on-state losses. It is suitable for applications such as industrial motor drives, programmable logic controllers and renewable energy systems.

IGBTs combine the fast switching speeds of MOSFETs with the low on-state voltage drop of an BJT. This makes them a good choice for applications where high switching speeds and low losses are required, such as in motor drives, inverters, welders, and solar array systems.

The IXGH48N60B3D1 has an emission current rating of 98A, a total gate charge of 75nC, and an on-state voltage drop of 1.15V. It also has an avalanche energy rating of 2.4mJ, a thermal resistance of 22.5K/W, and a maximum operating temperature of 175°C.

The IXGH48N60B3D1 has a voltage rating of 600V and is capable of switching at up to 10 kHz. It uses a patented, four-layer chip structure to reduce losses, while its leading-edge, trench-gate technology reduces turn-on and turn-off losses at high switching frequencies.

The IXGH48N60B3D1 operates by allowing a current to flow through the IGBT when a voltage is applied to the gate. The strength of the applied voltage determines the level of conduction current. When the voltage is below the breakdown voltage, no current will flow. The IGBT ensures fast switching between conducting and non-conducting states, making it ideal for applications requiring high switching speeds.

The IXGH48N60B3D1 is also able to operate in "short circuit mode", or in other words, with a gate voltage having no effect on the current flowing. This is useful in situations where a sudden, large current flowing through the IGBT needs to be interrupted quickly and effectively. This mode is particularly useful in applications such as motor drives, where unexpected surges in current need to be prevented.

The IXGH48N60B3D1 is a reliable and durable device, which makes it an excellent choice for a variety of applications in a wide range of industries. Its robust chip structure, low on-state losses and fast switching speeds make it an ideal choice for industrial motor drives, programmable logic controllers and renewable energy systems.

The specific data is subject to PDF, and the above content is for reference

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