IXGH32N90B2 Discrete Semiconductor Products

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IXGH32N90B2 Application Field and Working Principle

The IXGH32N90B2 is one of the most popular types of transistors today, especially within the field of IGBTs (Insulated Gate Bipolar Transistors). It has a wide range of applications, including motor drive and power conversion, power factor correction (PFC) circuitry, and switching of power semiconductor devices. It is based on a so-called \'bottom-ring\' structure, which is a combination of both polysilicon and dielectric layers.

The IXGH32N90B2 is typically available in a TO-220 package and has a variety of features that allows it to excel in a wide range of scenarios. These features include high current capability (up to 70 A), low on-resistance (down to 100 mΩ), as well as low gate charge and a high switching frequency (up to 100 kHz).

Working Principle

The working principle of the IXGH32N90B2 relies on the principle behind all IGBTs, which is that of two switching elements in a single package, each one with its own characteristics. In the case of the IXGH32N90B2, this consists of an N-channel MOSFET as the main switching element, coupled with a P-channel MOSFET as a control element.

The N-channel MOSFET, also known as the "primary switch," handles the majority of the load current and provides the desired voltage or current to the load. The P-channel MOSFET, known as the "control switch," acts as an inverter, which allows the primary switch to be turned on and off in order to control the load current.

When a low voltage is applied to the gate of the P-channel MOSFET, the channel creates an inversion layer and the RDS (on-state resistance) of the junction increases dramatically. This inversion layer also serves as a control mechanism, which allows the primary switch to be turned on and off, either actively or passively.

The IXGH32N90B2 also utilizes a specific "gate threshold voltage" mechanism. This allows the gate of the transistor to operate more efficiently, since it is better able to sense the voltage levels across the load. This gate threshold voltage also helps to reduce the gate current, since the voltage across the gate does not get as high.

As for the load current, it is dependent on the load characteristics and is limited to the maximum load current of the transistor itself. For example, the IXGH32N90B2 has a maximum load current of 70A, so any load current outside this range will cause the transistor to be over-currented, leading to possible damage or destruction of the device.

Applications

The IXGH32N90B2 is a versatile and reliable power MOSFET, suitable for a variety of applications. It is commonly used as a power device in motor drives and power conversion applications, while also being suitable for manufacturing circuits that require high current output such as power factor correction (PFC) and switched mode power supplies (SMPS).

The IXGH32N90B2 is also suitable for multi-phase applications and is mainly used in the automotive and aerospace industries. Due to its high current capability and low gate charge, the IXGH32N90B2 is well-suited for switching applications and is often used as the main power semiconductor in SMPS designs.

Another common application for the IXGH32N90B2 is in robotics and automation, where it is used for efficient and reliable power conversion. This is due to its switching speed and its ability to control the power supplied to the load.

In summary, the IXGH32N90B2 is an excellent choice for a wide range of applications, from motor drive and industrial automation to military and automotive grade electronics. Its wide range of features makes it a suitable device for many different scenarios and its reliability and performance make it the go-to choice for many power electronics engineers.

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