IXGH60N60C3D1 Allicdata Electronics
Allicdata Part #:

IXGH60N60C3D1-ND

Manufacturer Part#:

IXGH60N60C3D1

Price: $ 4.67
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 380W TO247AD
More Detail: IGBT PT 600V 75A 380W Through Hole TO-247AD (IXGH)
DataSheet: IXGH60N60C3D1 datasheetIXGH60N60C3D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 4.67000
10 +: $ 4.52990
100 +: $ 4.43650
1000 +: $ 4.34310
10000 +: $ 4.20300
Stock 1000Can Ship Immediately
$ 4.67
Specifications
Switching Energy: 800µJ (on), 450µJ (off)
Base Part Number: IXG*60N60
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 25ns
Test Condition: 480V, 40A, 3 Ohm, 15V
Td (on/off) @ 25°C: 21ns/70ns
Gate Charge: 115nC
Input Type: Standard
Series: GenX3™
Power - Max: 380W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Current - Collector Pulsed (Icm): 300A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGH60N60C3D1 is a field-stop type, shrouded-gate, isolated, base isolated IGBT module with isolated base, which can be used in many applications. It has a max Vceo rating of 600V, max Vce rating of 580V, and a max Ptot rating of 540Watts.

In the past, insulated gate bipolar transistors (IGBTs) were used exclusively in motor control applications such as drives, inverters and rectifiers. Today, their application field has been extended to telecom, audio, automotive, lighting, power supplies, medical and defense systems, to name a few.

In power electronics, silicon IGBTs have been traditionally used in high efficiency applications, particularly in solar flashing and DC-DC converters. IXGH60N60C3D1 is a powerful and reliable IGBT module, capable of withstanding high temperature and high frequency operation.

It can operate with low switching losses and high junction temperature, due to its optimized structure with robust planar technology. The IXGH60N60C3D1 package design includes a double sided cooling system, an isolated base, and cooling fins, providing increased thermal cycling capability over the single sided IXGH60N60C3D design.

The working principle of IXGH60N60C3D1 is based on the same principle of a conventional IGBT. It utilizes a bipolar junction transistor (BJT) as the input stage, a MOSFET as the output stage, and an isolated gate to control the on/off switches of the device. The MOSFET is connected from the Supply Terminal S to the Collector Channel C, creating a path for the current to flow from the Supply Terminal S to the Emitter Channel E.

When the voltage at the isolated gate G applied to IXGH60N60C3D1 is high and the voltage of Supply Terminal S is also high, the current flows through the Collector Channel C and the Emitter Channel E, with the Gate controlling the flow. When the voltage at the gate G is low, the device is off and the current cannot flow.

The advantages of IXGH60N60C3D1 include soft switching, low switching losses, low distortion, and high switching frequency. It also has a high short-circuit current capability, excellent thermal performance, high frequency operation, and is compatible with a wide range of circuits and logic levels.

In sum, IXGH60N60C3D1 is a powerful and reliable single-base, shrouded-gate, IGBT module that can be used in many different applications. It is designed to offer low switching losses and high junction temperatures, along with high frequency operation and excellent thermal performance. The IXGH60N60C3D1 module is the perfect choice for applications that require high power and low losses.

The specific data is subject to PDF, and the above content is for reference

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