IXGH48N60C3D1

Switching Energy:	410µJ (on), 230µJ (off)
Base Part Number:	IXG*48N60
Supplier Device Package:	TO-247AD (IXGH)
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	25ns
Test Condition:	400V, 30A, 3 Ohm, 15V
Td (on/off) @ 25°C:	19ns/60ns
Gate Charge:	77nC
Input Type:	Standard
Series:	GenX3™
Power - Max:	300W
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 30A
Current - Collector Pulsed (Icm):	250A
Current - Collector (Ic) (Max):	75A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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IXGH48N60C3D1 Application Field and Working PrincipleThe IXGH48N60C3D1 is an Insulated-Gate Bipolar Transistor (IGBT) that is designed to handle high voltages and current levels. It is available in a variety of packages to suit a variety of applications. The main advantages of the device are its high current ratings, low voltage drop and low switching losses. Its application field includes high power switching, motor reversing, motor control, and other high power conversion and inverter applications.The IXGH48N60C3D1 has two operating modes: normal mode and Reverse blocking mode. In normal mode, the device has an N-channel Insulated-Gate Field-Effect Transistor (IGFET) that controls current flow between the collector and the emitter of the transistor. The voltage across the drain and source terminals is determined mainly by the gate-to-source voltage applied to the device. The current, on the other hand, is regulated by the ratio of the gate charge to the drain-source voltage. In reverse blocking mode, the polarity of the voltage is reversed and the N-channel MOSFET blocks current flow between the collector and the emitter. The threshold voltage of the device can also be adjusted to control the magnitude of the voltage at the source and drain terminals. The device is also designed to be low-firing and low-charge in order to reduce switching losses. The off-state power dissipation is minimized due to its low voltage drop, which is achieved by using a low threshold voltage. Even when on, the device has a low voltage drop, meaning it can handle higher current flows than other transistors. The IXGH48N60C3D1 is also designed to withstand high-voltage surges, making it suitable for use in harsh environments. It is also robust enough to work in temperatures ranging from -40 to 175 degrees Celsius. The device is also equipped with a built-in metal oxide varistor, which provides additional protection for current and voltage overloads.In summary, the IXGH48N60C3D1 is a powerful Insulated-Gate Bipolar Transistor for a variety of applications. Its high current ratings, low voltage drop, and low switching losses make it ideal for use in high power switching, motor reversing, motor control, and other high power conversion and inverter applications. Its low-firing and low-charge features minimize off-state power dissipation and its high-voltage surge resistance makes it suitable for use in harsh environments.

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