IXGH20N120IH

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The IXGH20N120IH is a single Insulated-Gate Bipolar Transistor (IGBT) from IXYS Corporation, designed for use in high frequency switching applications. It is the industry standard for reliable and cost-effective power switching in a wide variety of applications.

The IXGH20N120IH IGBT is a high blocking voltage, low power and high speed power switch. It features a collector-emitter breakdown voltage (BVCES) of 1200V and a collector current of 20A. The IXGH20N120IH is designed with a soft saturation to reduce switching losses, making it an ideal choice for higher power applications. The IXGH20N120IH has a maximum on-state voltage drop of 1.24V and a maximum switching frequency of 30kHz. The IXGH20N120IH is also a low distortion and low noise device.

The IXGH20N120IH IGBT can be used in a variety of applications such as high frequency switching, welding, and power factor correction. It is ideal for applications where high voltage and high current are needed. It can also be used in motor drives, AC/DC and DC/DC converters, and inverter modules. The IXGH20N120IH IGBT can also be used in renewable energy applications such as wind turbines and photovoltaic systems. It can also be used in industrial motor drives, UPS, and surge protection circuits.

The IXGH20N120IH IGBT utilizes the principle of gate turn-off (GTO) as the fundamental mode of operation. The GTO principle works by switching on the gate of the IGBT to turn-on the IGBT, then switches off the gate to turn-off the IGBT. This is accomplished by pulsing a trigger signal to the gate of the IGBT. When the trigger signal is turned off, the gate voltage of the IGBT is cut off, and the device is turned off. This type of operation allows for high-speed switching of the IGBT, while also providing a wide range of control over the IGBT current and voltage, making it an ideal choice for power switching.

The IXGH20N120IH IGBT is a reliable and cost-effective choice for power switching applications. Its soft saturation technology allows it to switch with minimal losses, while its high blocking voltage and low on-state voltage drop make it an ideal choice for high-power applications. Its GTO principle allows for high-speed switching and a wide range of control over current and voltage. The IXGH20N120IH IGBT is an excellent choice for applications requiring a high-performance and reliable power switching solution.

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