Allicdata Part #: | IXGH30N60BU1-ND |
Manufacturer Part#: |
IXGH30N60BU1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 600V 60A 200W TO247AD |
More Detail: | IGBT 600V 60A 200W Through Hole TO-247AD (IXGH) |
DataSheet: | IXGH30N60BU1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Input Type: | Standard |
Base Part Number: | IXG*30N60 |
Supplier Device Package: | TO-247AD (IXGH) |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 50ns |
Test Condition: | 480V, 30A, 4.7 Ohm, 15V |
Td (on/off) @ 25°C: | 25ns/130ns |
Gate Charge: | 110nC |
Series: | HiPerFAST™ |
Switching Energy: | 1mJ (off) |
Power - Max: | 200W |
Vce(on) (Max) @ Vge, Ic: | 1.8V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 120A |
Current - Collector (Ic) (Max): | 60A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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The IXGH30N60BU1 is a type of insulated-gate bipolar transistor, commonly referred to as an IGBT. It is a single-devicesolid-state component, with an insulated gate for controlling current through a conductive channel. The IXGH30N60BU1 has a very high current rating of 30A and a voltage rating of 600V. It is capable of switching up to 500kHz. This makes it an ideal component for high-power applications in the industrial, automotive, and electronics industries. The IXGH30N60BU1 is widely used in the design and manufacture of electronic systems and devices, such as amplifiers, power supplies, motors, and robotics.The insulated-gate bipolar transistor has two components: an emitter and a collector. The emitter and collector are connected by a common “base” connection. Current flows from the emitter to the collector and is controlled by the insulated gate. When the gate is opened, current flows from the emitter to the collector, and when the gate is closed, current stops flowing. This type of transistor is commonly used in switching applications and can be used to switch high-power currents, such as those in motor control circuits.The IXGH30N60BU1 has a unique insulated gate structure, which combines a low gate charge with a fast switching speed. This makes the IXGH30N60BU1 an ideal choice for high-power and high-speed applications. The gate charge is the amount of current required to turn the device’s insulated gate on or off, and the faster the gate charge, the faster the device can switch high-power currents. The IXGH30N60BU1 can switch up to 500kHz making it suitable for high-frequency applications.The IXGH30N60BU1 also features low conduction loss, which is important for energy efficient systems. This type of transistor also features a very low leakage current, which helps reduce power dissipation and saves energy. Furthermore, the IXGH30N60BU1 has a very high thermal stability, making it suitable for applications that require high temperature operation.In conclusion, the IXGH30N60BU1 is an ideal single IGBT for high-power applications in the industrial, automotive, and electronics industries. It provides high current ratings, fast switching speeds, and low conduction losses, making it an ideal choice for switching and motor control applications. It is also highly thermally stable and is suitable for high temperature operation.The specific data is subject to PDF, and the above content is for reference
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