IXGH32N60BD1 Allicdata Electronics
Allicdata Part #:

IXGH32N60BD1-ND

Manufacturer Part#:

IXGH32N60BD1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 60A 200W TO247AD
More Detail: IGBT 600V 60A 200W Through Hole TO-247AD (IXGH)
DataSheet: IXGH32N60BD1 datasheetIXGH32N60BD1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Input Type: Standard
Base Part Number: IXG*32N60
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 25ns
Test Condition: 480V, 32A, 4.7 Ohm, 15V
Td (on/off) @ 25°C: 25ns/100ns
Gate Charge: 110nC
Series: HiPerFAST™
Switching Energy: 600µJ (off)
Power - Max: 200W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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The IXGH32N60BD1 is a single insulated gate bipolar transistor (IGBT) from Infineon Technologies AG. This IGBT is part of Infineon\'s DurEon series, and has a wide range of uses thanks to its 800V/300A peak pulse current rating. It has a relatively low on-state voltage drop of 1.7V and its output current at 150A can be achieved with a very low gate voltage of 12V. The device can be used in a variety of applications, ranging from high power switch mode power supplies to high frequency power conversion and motor drives.

The working principle of the IXGH32N60BD1 is relatively straightforward. At the input side, a gate driver produces a signal which is used to control the opening and closing of the IGBT. When the gate driver signal is high, the IGBT is turned on, allowing current to flow through the device. When the gate driver signal is low, the IGBT is turned off and the current flow stops. The transistor is designed to switch quickly and efficiently, allowing a high frequency current to be moved through the device.

The IXGH32N60BD1 is especially useful in applications which require high frequency switching. It is suitable for applications such as soft starters, UPS systems, welders, inverters and motor drives. It is also suitable for high speed switching applications such as welding transformers, energy storage converters, high frequency converters, mirror driving and traction inverters. The IXGH32N60BD1 also has very low switching losses, making it well suited for high power applications.

The IXGH32N60BD1 has many advantages compared to other IGBT transistors. It uses a very low gate driver voltage of 12V, allowing it to be used in a variety of different applications. It also has a low turn-off delay of 13ns, making it well suited for high frequency switching applications. In addition, the device is capable of achieving a peak pulse current of 300A, making it ideal for high power applications. Finally, the device has a very low on-state voltage drop of 1.7V, making it very energy efficient.

The IXGH32N60BD1 is a reliable and efficient IGBT which is well suited for a variety of different applications. Its low gate voltage and fast switching speed make it ideal for high power applications, while its low on-state voltage drop makes it energy efficient. This makes it the perfect choice for applications such as high power switch mode power supplies, high frequency power conversion, motor drives and welding transformers.

The specific data is subject to PDF, and the above content is for reference

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