IXGH34N60B2

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An IXGH34N60B2 is a high-voltage insulated-gate bi-polar transistor (IGBT) developed for use in power applications. The device is, essentially, a metal-oxide semiconductor field-effect transistor (MOSFET) with an integrated gate-protection diode. This provides an easy to integrate, low-cost solution for high-voltage applications. As an IGBT, this device combines the high-speed switching characteristics of a MOSFET with the low-saturation voltage characteristic of a bipolar transistor. This device is intended for use in both ac and dc switching power supplies, motor drives, welders and static inverters.

The main benefit of an IGBT is its ability to work at high voltages with low on-state losses. In comparison to a MOSFET, the IGBT reduces the possibility of switching losses. The IXGH34N60B2 is a 600V device with a drain current of 34A. It is equipped with a reverse conduction diode, and has an on-state resistance of 4.15mΩ. The device has a very fast switching speed, making it ideal for high-speed applications.

IXGH34N60B2 can be used in many different applications. It is suitable for motor drives, power converters, frequency inverters, static transfer switches, UPS, welding and traction applications. The applications include rotating machines, electric vehicles and industrial servo drives.

For some applications, the IGBT is the only switching device that can provide the desired performance. Thanks to its fast switching, high reliability and low losses, the IXGH34N60B2 can provide significant improvements in overall system efficiency.

The IXGH34N60B2 has a simple working principle. The gate-source voltage creates a channel between the drain and source electrodes that behaves like a conductive path when it is in the forward region. This allows current to flow through it and supplies sufficient power to the load. The conduction path eliminates the need for a separate diode and offers a high performance level with increased efficiency.

In conclusion, the IXGH34N60B2 device is a high performance insulated-gate bi-polar transistor (IGBT) developed for use in power applications. It is suitable for motor drives, power converters, frequency inverters, static transfer switches, UPS, welding and traction applications. It provides a low cost solution with fast switching speed, high reliability and low losses that allow significant improvements in overall system efficiency.

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