IXGH42N30C3 Allicdata Electronics
Allicdata Part #:

IXGH42N30C3-ND

Manufacturer Part#:

IXGH42N30C3

Price: $ 1.55
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 300V 223W TO247
More Detail: IGBT PT 300V 223W Through Hole TO-247AD (IXGH)
DataSheet: IXGH42N30C3 datasheetIXGH42N30C3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 1.40574
Stock 1000Can Ship Immediately
$ 1.55
Specifications
Power - Max: 223W
Supplier Device Package: TO-247AD (IXGH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 200V, 21A, 10 Ohm, 15V
Td (on/off) @ 25°C: 21ns/113ns
Gate Charge: 76nC
Input Type: Standard
Switching Energy: 120µJ (on), 150µJ (off)
Series: GenX3™
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
Current - Collector Pulsed (Icm): 250A
Voltage - Collector Emitter Breakdown (Max): 300V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGH42N30C3 Application Field and Working Principle

IGBTs - Single is a type of transistor technology that utilizes insulated gate bipolar transistors (IGBTs) due to their versatility and relatively high efficiency. IGBTs involve the use of two transistors in tandem, in order to achieve a desired level of switching and amplification. The IXGH42N30C3 is an example of an IGBT single that is widely used in industrial applications for its efficient and powerful operation.

The IXGH42N30C3 is a medium power IGBT from the IXGxH42N30C series. This model offers a wide range of applications, such as robotics, industrial automation, power supplies, HVAC systems, vehicle electronics, renewable energy, and other devices made for energy efficiency. This IGBT features low power losses and a low on-state voltage drop, making it a great choice for any industrial application.

When it comes to construction, the IXGH42N30C3 is usually packaged in a PowerMESHTM, a surface-mount technology that is designed to minimize power loss, reduce EMI problems and provide a high-current transfer efficiency. Moreover, it can be obtained in various packages such as TO-247, DPAK, TO-220, and SIP4 packages. This model provides a temperature range from -40°C to 150°C, a blocking voltage of up to 600V, and an RDS(on) of 8.4 mΩ.

On the other hand, IGBTs - Single also offers a very efficient working principle due to its structure and components. The two transistors are connected back to back and are closely matched, meaning that their characteristics perfectly complement one another. This allows for an efficient and reliable operation of the IGBT. As current is applied to the gate of the transistor, it will be amplified and then passed on to the second transistor. The second transistor then amplifies and passes on the current to the output, resulting in a much more powerful signal. This results in a much more efficient operation, as the energy is able to be distributed more evenly throughout the IGBT.

The IXGH42N30C3 IGBT single is designed to operate in a wide variety of industrial applications, due to its high efficiency and low power losses. This makes it a great choice for devices and equipment that require an efficient, powerful and reliable operation. The two transistors connected back to back also offer an efficient and reliable working principle, allowing for an efficient distribution of energy and amplification of the signal. This makes IGBTs - Single a great asset for any type of industrial applications.

The specific data is subject to PDF, and the above content is for reference

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