IXGH45N120

IXGH45N120 is a single gallium nitride (GaN) insulated gate bipolar transistor (IGBT) chip. It is mainly used in power, high-frequency and high-current applications. It has a rated voltage of 800 V, a peak output current of 80 A, and a maximum output frequency of 20 MHz. It is also thermal-resistant and SMD packaged for easy installation in various systems.

Application Field of IXGH45N120

IXGH45N120 is mainly used for high-power and high-frequency applications, including high-power DC/DC converters, high-frequency switching power supplies and motor control. It can save power consumption, reduce the size and weight of the system, and reduce the time of switching. It can also transfer high power with less heat dissipation, improving the thermal performance of the system.

IXGH45N120 can also be used in industrial automation and motor control, providing superior efficiency, low EMI noise and improved thermal performance. It is also suitable for automotive applications and is ideal for high-current and high-power applications, such as electric vehicle control systems and powertrain systems.

Working Principle of IXGH45N120

The IXGH45N120 is a single Gallium Nitride (GaN) insulated gate bipolar transistor (IGBT) chip. It contains a semiconductor layer which is a base layer of semiconductor material sandwiched between two insulating layers. It is a three-terminal device with a gate, emitter and collector controlling its operation. When the gate voltage is increased to a certain level, the current can pass through the device, resulting in the opening of the IGBT.

When the gate voltage is applied to the IGBT, the current flows from the collector to the emitter through the semiconductor layer. The amount of current is determined by the gate voltage. If the gate voltage is positive, then the amount of current is proportional to the gate voltage. If the gate voltage is increased, more current will flow, resulting in the conduction of the IGBT.

In contrast, if the gate voltage is decreased, the amount of current will be reduced and the IGBT will be turned off.The use of a specialised material such as Gallium Nitride (GaN) in the fabrication of IXGH45N120s helps to reduce the switching time and thermal resistance, while also improving the transistor’s thermal performance and efficiency.

In conclusion, the IXGH45N120 is a single gallium nitride (GaN) insulated gate bipolar transistor (IGBT) chip. It is mainly used in high-power, high-frequency and high-current applications, such as DC/DC converters and motor control systems. It has a rated voltage of 800 V, a peak output current of 80 A and a maximum output frequency of 20 MHz. Its use of a specialised material helps to reduce the switching time and thermal resistance, while also improving the transistor’s thermal performance and efficiency.