IXGH50N60C4

Switching Energy:	950µJ (on), 840µJ (off)
Supplier Device Package:	TO-247AD (IXGH)
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	400V, 36A, 10 Ohm, 15V
Td (on/off) @ 25°C:	40ns/270ns
Gate Charge:	113nC
Input Type:	Standard
Series:	--
Power - Max:	300W
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 36A
Current - Collector Pulsed (Icm):	220A
Current - Collector (Ic) (Max):	90A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	PT
Part Status:	Obsolete
Packaging:	Tube

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IXGH50N60C4 Application Field and Working Principle

The IXGH50N60C4 is a top-level IGBT device produced by Infineon Technologies AG. It is a single, high power, and low voltage transistor which was designed to handle a broad range of applications. The IXGH50N60C4 features a wide range of features that make it an ideal choice for many types of applications.

Application Fields

The IXGH50N60C4 is capable of carrying large amounts of current and has a low saturation voltage, making it suitable for a wide range of applications. It is used for a range of power supplies, including induction heating, solar power converters, flyback DC/DC converters and power distribution systems. The IXGH50N60C4 is also ideal for high speed, high frequency and high power switching as well as automotive applications, such as electric vehicle powertrain control systems and motor drivers.

Working Principle

The IXGH50N60C4 is a high-voltage, high-current transistor. It works on the principle of bipolar junction technology, which means that two p-type and n-type doped semiconductor regions are connected to form a conducting channel. When the base voltage is applied, electrons and holes are created in the respective regions, allowing current to flow through the device.The IXGH50N60C4 is designed with a built-in diode to protect against negative voltages. It also has a wide range of features, such as a low on-state resistance, a fast switching time, and a low reverse recovery charge. The device is also designed with a gate-emitter voltage of up to 18V and a gate current of up to 4A, to ensure a smooth switching performance.

Conclusion

The IXGH50N60C4 is a high power, low voltage transistor that can handle a wide range of applications. It has a low on-state resistance, a fast switching time, and a low reverse recovery charge, making it an ideal choice for power supplies, high speed switching, and automotive applications. The IXGH50N60C4 also contains a built-in diode to protect against negative voltages. With its robust design and wide range of features, the IXGH50N60C4 is an excellent choice for a variety of applications.

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