IXT-1-1N100S1-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	1000V
Current - Continuous Drain (Id) @ 25°C:	1.5A (Tc)
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	--
FET Feature:	--
Power Dissipation (Max):	--
Operating Temperature:	--
Mounting Type:	--
Supplier Device Package:	--
Package / Case:	--

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IXT-1-1N100S1-TR Application Field and Working Principle

The IXT-1-1N100S1-TR is a high-performance MOSFET (metal-oxide semiconductor field-effect transistor) used extensively in different types of electronic circuitry. This transistor is manufactured by International Rectifier and is rated at 100 Volts and four Amperes. It is commonly used in many industrial, automotive and consumer electronics applications.The IXT-1-1N100S1-TR is a enhancement mode n-MOSFET (or n-type MOSFET) with an easy-to-use design. Due to its low total gate charge and high Power MOSFET density, it is ideal for switching applications requiring low on-state resistance and fast switching times. The IXT-1-1N100S1-TR can be used in a variety of applications such as DC-to-DC converters, motor control, and power supply designs.The enhancement-mode (or "Threshold-Voltage-Controlled") MOSFET is a common type of transistor that is formed by the injection of positive and negative charges into a semiconductor substrate. This type of transistor is designed to be constantly on when no voltage is applied to the gate, but can be turned on or off depending on the voltage applied to the gate. When a positive voltage is applied to the gate, current will flow from the source to the drain. This is commonly known as depletion-mode, and it is usually used in switching applications.The working principle of the IXT-1-1N100S1-TR is simple and straightforward. When no voltage is applied to the gate, no current will flow between the source and the drain. However, when a positive voltage is applied to the gate, a small electric field is established which enables current to flow between the source and the drain. This current is limited by the resistance of the channel and the gate-source voltage.The IXT-1-1N100S1-TR is an ideal choice for a variety of application requirements due to its low-voltage, low-power consumption, and secure source-drain connection. It can be used for simple switching tasks in DC-to-DC converters, power supply designs, and motor control applications. Additionally, the IXT-1-1N100S1-TR is also useful in advanced embedded applications due to its low on-state resistance and fast switching times.Overall, the IXT-1-1N100S1-TR is a reliable, high-performance MOSFET that is suitable for a variety of applications that require low on-state resistance and fast switching times. Its size, performance, and current ratings make it an ideal choice for many different industrial, automotive, and consumer electronics applications.

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