Allicdata Part #: | IXT-1-1N100S1-ND |
Manufacturer Part#: |
IXT-1-1N100S1 |
Price: | $ 8.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 1.5A 8-SOIC |
More Detail: | N-Channel 1000V 1.5A (Tc) |
DataSheet: | IXT-1-1N100S1 Datasheet/PDF |
Quantity: | 1000 |
94 +: | $ 7.96152 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Tc) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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The IXT-1-1N100S1 is a single HEXFET power MOSFET with low drain-source on-resistance of only 100mO at 10V. This MOSFET is designed to withstand high dV/dt and offers excellent power handling capabilities to assure reliable single device operation for various applications. Its low profile package helps to reduce assembly cost.
Usually, IXT-1-1N100S1 is used in applications where high frequency switching, low operating gate voltage, or a combination of both are required. Its low threshold voltage helps to reduce power dissipation and increases the efficiency. It offers low increase in on-resistance across the temperature range.
Furthermore, IXT-1-1N100S1 finds application in various designs due to its good thermal management feature. Due to its low on-resistance and high dV/dt capabilities, it is suitable for circuits such as lighting drivers, power converters, dc-dc converters, and Class-D audio amplifiers.
Working Principle of IXT-1-1N100S1
The IXT-1-1N100S1 is a single HEXFET power MOSFET with a low drain-source on-resistance of 100mO at 10V. It is designed with a vertical structure and utilizes a double diffused layer. This feature helps to minimize switching delay and reduce on-resistance (RDS(on)).
The working of this MOSFET is based on the principle of electrostatics. It consists of an insulated gate, i.e. a gate made up of semiconductor material with insulation. This gate controls the source-drain current by modulating the electric field. When a gate voltage is applied, it creates an electric field between source and drain. This modulates the source-drain current and helps to switch the device from on to off and vice versa.
The high frequency switching capability of IXT-1-1N100S1 helps is to provide fast switching at high current densities. Thus, it can handle high frequency applications and provides improved efficiency. Moreover, it has high dV/dt immunity which helps to prevent gate break-down at high switching frequency.
Conclusion
The IXT-1-1N100S1 is a single HEXFET power MOSFET which utilizes the principle of electrostatics. It has a low on-resistance of only 100mO at 10V and is suitable for high frequency switching applications. Furthermore, it also offers good thermal management, due to its low profile package. Thus, this MOSFET is widely used in applications such as lighting drivers, power converters, dc-dc converters, and Class-D audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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