IXYX100N120B3 Discrete Semiconductor Products

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IGBTs (Insulated Gate Bipolar Transistors) are semiconductor devices used for switching, voltage and current control purposes. They combine the advantages of MOSFETs (metal oxide semiconductor field effect transistors) and Bipolar Junction Transistors (BJTs). IXYX100N120B3 is such an IGBT, used in many applications due to its high power handling capacity and fast switching time.

The IXYX100N120B3 is a single IGBT, which is package type TO-263 type3 with short leads and short circuit current capability up to 520A. This IGBT has maximum continuous collector current of 100A and total power dissipation of 500W. This device provides high efficiency and switching speed, which results in low power losses and quick switching.

This IGBT has a maximum collector-emitter voltage of 1200V and an average gate emitter voltage of 10V. It has a maximum gate emitter voltage of 25V and a maximum gate source voltage of 10V. The device has an on-state resistance between collector and emitter of 0.4 ohm and a gate threshold voltage of approximately 5V and a turn-on delay time of 17ns.

The IXYX100N120B3 can be used in different areas such as telecommunication, industrial automation, motor control, UPS system, solar inverter, and switching power supply. It is mainly used in motor control applications such as AC motor control, DC motor control, and brushless DC motor control. It is also used in switching applications such as DC-DC, AC-DC and PFC (Power Factor Correction). It is also used in UPS systems and solar inverters, where it is used to control the flow of power.

The working principle of the IGBT is based on the formation of a depletion region when a voltage is applied between the gate and the collector-emitter region. The size of this depletion region determines the amount of current that can flow from collector-emitter. This depletion layer can be changed by using either a positive or negative voltage. A positive voltage increases the size of the depletion layer, thus allowing more current to flow. A negative voltage reduces the size of the depletion layer, thus reducing the amount of current that can flow.

When the gate voltage is higher than the turn-on voltage, the gate-emitter junction of the device starts conducting and the gate voltage pulls the electrons from the N-region to the P-region, forming a conducting path between the collector and the emitter. This further increases the current through the device and the device is said to be in the “on” state. On the other hand, when the gate voltage falls below the turn-off voltage, the electrons are no longer able to flow and the device is said to be in the “off” state.

The IXYX100N120B3 is a high power and fast switching single IGBT device, which is used in many applications. It has a high power handling capacity, fast switching time and low on-state resistance. It has a high efficiency, rugged package and good performance. It is mainly used in motor control, switching power supply, UPS system and solar inverter applications.

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