IXYX200N65B3 Discrete Semiconductor Products |
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Allicdata Part #: | IXYX200N65B3-ND |
Manufacturer Part#: |
IXYX200N65B3 |
Price: | $ 9.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT |
More Detail: | IGBT 650V 410A 1560W Through Hole PLUS247™-3 |
DataSheet: | IXYX200N65B3 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 8.29710 |
Input Type: | Standard |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 108ns |
Test Condition: | 400V, 100A, 0 Ohm, 15V |
Td (on/off) @ 25°C: | 60ns/370ns |
Gate Charge: | 340nC |
Series: | XPT™, GenX3™ |
Switching Energy: | 5mJ (on), 4mJ (off) |
Power - Max: | 1560W |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 100A |
Current - Collector Pulsed (Icm): | 1100A |
Current - Collector (Ic) (Max): | 410A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | -- |
Part Status: | Active |
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The IXYX200N65B3 is a single IGBT that belongs to the transistor family. It is specifically designed for applications that require a smaller size and higher efficiency than other options on the market. The IXYX200N65B3 can be used in a variety of applications, including motor control, lighting, power conversion, and more. It is also suitable for use in consumer electronics applications such as the IGBT inverter CNC machine.
The IXYX200N65B3 is an MOS-gated transistor that uses a single insulation gate bipolar transistor (IGBT) as its switching element. It is designed with a bipolar junction transistor (BJT) and a surplus gate control circuit that is suitable for use in high voltage and switching applications. This IGBT is rated for a maximum collector current of 200A, making it suitable for a number of applications. The low gate threshold voltage of the IXYX200N65B3 allows for easy switching speed.
The IXYX200N65B3 is an IGBT with a single gate structure. The gate structure is designed to reduce the on-resistance of the device while still providing a high level of operating efficiency. The low gate threshold voltage ensures fast switching speeds and higher efficiency. This IGBT also features a low gate charge, allowing for higher switching speed and efficiency compared to traditional IGTFs. The IXYX200N65B3 also features excellent thermal properties and low leakage current at high voltages for reliable operation.
The IXYX200N65B3 is a versatile device and is ideal for use in a variety of applications. It is suited for use in power conversion, high power, and high voltage applications. In addition, this device is capable of switching high frequency signals, making it suitable for use in motor control and CNC machines. The device can also be used in lighting applications due to its low power consumption. The IXYX200N65B3 is also suitable for power management applications due to its low on-state resistance and high switching speed.
The IXYX200N65B3 is designed with a low gate charge and offers excellent thermal capabilities. This device is suitable for use in high frequency applications. The IXYX200N65B3 is also designed to provide improved noise immunity, low voltage drop, and improved reliability. This device is also suitable for use in high voltage applications such as power supplies, DC/DC converters, and motors.
In conclusion, the IXYX200N65B3 is a single IGBT that is suitable for use in a variety of applications. It is suitable for use in power conversion applications, motor control, and lighting due to its low gate charge, low on-state resistance, and high switching speed. The device is also suitable for use in high voltage applications due to its excellent thermal properties and low leakage current. Overall, the IXYX200N65B3 is an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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