IXYX30N170CV1 Discrete Semiconductor Products

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IGBTs are a type of Field-Effect Transistor (FET) developed for power control and switching applications. The IXYX30N170CV1 is a single IGBT, which means that it consists of a single N-type MOSFET (N-MOSFET) element designed to operate at high voltages and high temperatures. As with other types of MOSFET, IXYX30N170CV1 has vertical structure. The device is optimized for low conduction losses, low Switching losses, and highly reliable operation. It is suitable for use in a variety of industrial and consumer applications.

IXYX30N170CV1 is an advanced device featuring soft breakdown of the body diode, low gate charge and fast switching speeds. It has a negative temperature coefficient and a high blocking voltage of 300V. It has a reverse gate to emitter voltage of 900mV, with an operating temperature range of 0°C to 125°C when used with a heatsink. This device also features low noise and low electromagnetic interference, making it ideal for use in automotive and other high-frequency applications.

The IXYX30N170CV1 is a single bidirectional IGBT and is used mainly for switch mode power supplies and DC-AC inverters. The device is composed of two separate N-channel MOSFETs, one on top of the other. The topmost MOSFET forms the main power switch, while the bottom MOSFET forms the body diode. In a typical application, the MOSFET is used as a switch with a controllable on and off state. When the gate voltage is brought above the threshold voltage, the device turns on, allowing current to flow from the drain to the source. Once the voltage is brought below the threshold voltage, the device turns off and no current can flow.

The IXYX30N170CV1’s single IGBT also offers superior current handling capability. This allows it to be used in demanding applications such as motor control, AC-DC conversion, and thyristor inverters. The device supports a high dV/dt capability and has a low gate charge, which makes it an ideal choice for applications where fast switching speeds are required. Furthermore, the device features enhanced power dissipation and integrated EMI suppression.

The IXYX30N170CV1 has a wide range of applications, from switching power supplies to motor control and thyristor inverters. With its low gate charge, soft breakdown of the body diode, and fast switching speeds, the device is well-suited for high-frequency switching applications. It also has excellent current handling capabilities and low noise output, making it an ideal choice for automotive and other high-reliability applications.

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