IXYX140N90C3 Discrete Semiconductor Products

Power - Max:	1630W
Supplier Device Package:	PLUS247™-3
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	450V, 100A, 1 Ohm, 15V
Td (on/off) @ 25°C:	40ns/145ns
Gate Charge:	330nC
Input Type:	Standard
Switching Energy:	4.3mJ (on), 4mJ (off)
Series:	GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 140A
Current - Collector Pulsed (Icm):	840A
Current - Collector (Ic) (Max):	310A
Voltage - Collector Emitter Breakdown (Max):	900V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction to IXYX140N90C3 IGBT

An IXYX140N90C3 IGBT is a type of switch and amplifier transistor device. It is a part of the IGBT family and is a single type of transistor that is often used in various electronics applications. This IGBT operates differently than other types of transistors, making it ideal for applications that require faster switching and higher current or voltage capacity.

Application Field of IXYX140N90C3 IGBT

The IXYX140N90C3 IGBT is used in a variety of cold power applications, from high-power radio frequency (RF) wireless communication systems to audio and data amplifiers. It is also suitable for switching applications such as motor control, AC/DC power converters, and current-sensing switches. It can also be used in high-frequency switching power supplies and UPS systems.The high voltage capacity and fast switching speed of the IXYX140N90C3 IGBT makes it a great choice for applications that require a highly reliable and efficient device such as automotive and communications. It is also ideal for electrical programs that require low on-state voltage drop and increased power rating. The IXYX140N90C3 IGBT is also a good choice for applications where high voltage and current capacity is required.

Working Principle of IXYX140N90C3 IGBT

The IXYX140N90C3 IGBT is a single-gate insulated-gate bipolar transistor (IGBT) device. This means that the IGBT device is made up of two power components: an insulated gate field-effect transistor (IGFET) and a bipolar junction transistor (BJT).The IGFET is a variable resistor whose resistance is inversely proportional to the gate voltage. The gate voltage is increased in order to decrease the resistance of the IGFET and thus increase the current flow. The BJT, also referred to as the collector, is connected to the drain of the IGFET. The BJT is an amplifier, meaning that a small amount of current passing through it can cause a large increase in the current being amplified. The combination of these two components provides the IXYX140N90C3 IGBT with both its high voltage capacity and fast switching speed. It allows for higher current and voltage control, and can switch states at higher speeds than other types of transistors. The fast switching speed also allows for more efficient operation, thus reducing power loss and power supply design compromise.

Conclusion

In conclusion, the IXYX140N90C3 IGBT is a unique type of transistor that is ideal for applications that require faster switching and higher current or voltage capacity. It is suitable for a variety of cold power applications, from high-power RF wireless communication systems to audio and data amplifiers. It can also be used in current-sensing switches, motor control, AC/DC power converters and high-frequency switching power supplies. The IXYX140N90C3 IGBT combines an insulated gate field-effect transistor and a bipolar junction transistor to provide it with a fast switching speed and a high voltage capacity. It is also known for its low on-state voltage drop and increased power rating, making it a great choice for applications that require a highly reliable and efficient device.

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