IXZR08N120B-00

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The IXZR08N120B-00 is a part of the IXZ series of FET (Field Effect Transistor) manufactured by IXYS Corporation. It is a high-performance N-channel MOSFET specifically designed for RF (Radio Frequency) applications. The device is specified for operation from 50 to 750 MHz. It provides up to 12 dB small-signal gain, with a high maximum output power of 38dBm, which makes the IXZR08N120B-00 ideal for applications like power amplifiers, linear amplifiers, and communication systems.

The IXZR08N120B-00 is constructed as a multi-gate FET having an N-channel MOS structure, and is manufactured using high-voltage technology. The device also features self-aligned drain and gate construction and has a wide lead in order to give optimal performance. The device’s structure is made up of a single, highly doped polysilicon gate electrode which is separated by a dielectric layer from the drain and source regions. This ensures low capacitance and gate-drain parasitic capacitance.

The IXZR08N120B-00 is designed with an RF specific layout of the source, gate, and drain areas that improve the device’s responsiveness and stability at high-power levels. This layout also results in low drain feedback capacitance and gate turn-on thresholds, as well as reduced transit and turn-on times. Furthermore, the device features high-gate-to-drain isolation and low electrical noise due to its self-aligned construction.

In terms of performance, the IXZR08N120B-00 offers impressive results for devices of this size. It has a low on-resistance of 0.3 ohms and a maximum forward gate-source voltage (Vgs) of +12V. It also has a maximum reverse drain-source voltage (Vds) of -55V and a maximum power dissipation of 0.5W. The operating temperature range is also impressive, with an extreme temperature range of -30°C to +150°C.

The IXZR08N120B-00 is designed to have low reverse bias leakage current, fast switching times, and excellent thermal and electrical stability over a wide temperature range. This makes the device suitable for a wide range of RF applications such as amplifiers, transmitters, receivers, antennas, and more. It also makes the device an ideal solution for power amplifier applications due to its high output power and low drain-source resistance.

The IXZR08N120B-00 is an excellent choice for any RF application that requires high performance, low capacitance, and high output power. With its ability to provide precise and efficient operation, the device is perfect for RF applications requiring high power. Its exceptional performance, low resistance, and wide temperature range make the IXZR08N120B-00 a great choice for applications such as power amplifiers, linear amplifiers, and communication systems.

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