IXZR18N50

IXZR18N50 Application Field and Working Principle

The IXZR18N50 is an RF MOSFET transistor developed by IXYS Corporation with a lower gate charge, improved gate-to-drain feedback capacitance, and better gate-to-source feedthrough. This power MOSFET is ideal for high efficiency RF power amplifier applications including broadband spectrum analyzers, cellular radio, land mobile radio, and wideband VCOs. In general, IXZR18N50 has better thermal or electrical characteristics than traditional POWER MOSFETs.

Features of IXZR18N50

• Low gate charge for high speed operation.
• Excellect frequency response.
• Excellent RF isolation.
• Soft-recovery diode characteristics.
• Rugged die construction.

Application

IXZR18N50 is suitable for wide range of applcations requiring high frequency. Its high current carring and wideband RF performance makes it an ideal choice for applications such as:

• Broadband spectrum analyzers
• Cellular radio
• Land mobile radio
• Revolutionary VCOs

Working Principle

The working principle of IXZR18N50 is based on the fact that the gate of an FET is very sensitive to electric field. The gate-to-source voltage causes the electrons in the gate to repel each other and thus the current flowing through the device. The gate-to-drain voltage, on the other hand, attracts electrons. As the gate-to-drain voltage increases, the number of electrons increases, which results in an increase of current through the device. This relationship is what makes the IXZR18N50 so efficient and powerful.

Advantage

The major advantage of this FET is it low gate charge, which leads to a high-speed operation. It also has excellent frequency response, excellent RF isolation, superior soft-recovery diode characteristics, and a rugged die construction. In addition, the IXZR18N50 offers high power gain and high output power. It also has high efficiency for both linear and saturated operations.

Conclusion

The IXZR18N50 is a versatile power MOSFET with a low gate charge and improved gate-to-drain feedback capacitance. It is suitable for a wide range of applications from broadband spectrum analyzers to revolutionary VCOs. Due to its low gate charge and superior electrical characteristics, the IXZR18N50 is an excellent choice for high power applications.