Allicdata Part #: | J111_D27Z-ND |
Manufacturer Part#: |
J111_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 35V 625MW TO92 |
More Detail: | JFET N-Channel 35V 625mW Through Hole TO-92-3 |
DataSheet: | J111_D27Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 35V |
Current - Drain (Idss) @ Vds (Vgs=0): | 20mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 3V @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 30 Ohms |
Power - Max: | 625mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J111 |
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J111_D27Z transistors are a special type of junction field-effect transistors (JFETs). They have a few key features which make them an attractive option both in engineering and in consumer applications.
JFETs are three-terminal semiconductor devices consisting of a source, a drain, and a gate. Unlike standard transistors, the JFET doesn’t regulate the current through it, but rather the voltage across it. Electricity is conducted between the source and the drain, but the voltage and current are constrained by a gate voltage applied to the gate terminal. Because of this, JFETs are often used as voltage-controlled switches.
J111_D27Z transistors are made from a silicon-based material, meaning they offer a low on resistance, good thermal stability and excellent durability for demanding applications. They are also low-noise, which makes them ideal for audio and video applications. They are also relatively simple and inexpensive to manufacture, making them a popular choice for consumer applications.
When it comes to J111_D27Z transistors, the key is the low-gate to drain capacitance. This low capacitance allows the transistors to switch quickly, operate at high frequencies, and with low power consumption. This makes them well-suited for use in high-speed analog, and digital, devices.
J111_D27Z transistors are also useful for power-switching applications. Since the current is regulated by the voltage across it, this allows for very accurate and efficient switching. This can be particularly useful for motor control, where precise operations and a low power consumption are required.
JFETs also tend to be more resistant to electrostatic discharges than bipolar junction transistors. This makes them an ideal choice for low-voltage applications, where an electrostatic discharge can be catastrophic. The low gate to drain capacitance also plays a role here, as it reduces the chances of an electrostatic discharge causing damage.
In summary, the J111_D27Z transistors offer some advantages over standard transistors. They offer a low on resistance, good thermal stability and excellent durability for demanding applications. They are also low-noise and have a low-gate to drain capacitance, which allows them to operate at high frequencies and with low power consumption. They are also extremely resistant to electrostatic discharges, making them ideal for low-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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