J111,126 Discrete Semiconductor Products |
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Allicdata Part #: | 568-5810-3-ND |
Manufacturer Part#: |
J111,126 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | JFET N-CH 40V 400MW TO92-3 |
More Detail: | JFET N-Channel 40V 400mW Through Hole TO-92-3 |
DataSheet: | J111,126 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Drain to Source Voltage (Vdss): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 20mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 10V @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 6pF @ 10V (VGS) |
Resistance - RDS(On): | 30 Ohms |
Power - Max: | 400mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J111 |
Description
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<p><strong>J111,126 Application Field and Working Principle</strong></p><p>The J111 and J126 are two steel-gate field-effect transistors (FETs). They are JFETs (Junction Field Effect Transistors) that provide improved performance over traditional bipolar transistors. The J111 and J126 have the same layout and structure, but the added steel gate offers a lower power dissipation and higher transconductance compared with the JFETs used until now.</p><p><strong>Working Principle</strong></p><p>The J111 and J126 employ a conventional FET structure, with a conducting channel between two fixed electrodes – the source and the drain. This channel is comprised of a very thin sheet of crystalline material (typically silicon) with its surface near the gate electrode. By applying a negative voltage to the gate electrode, the channel’s electrical resistance is increased and the current flow is inhibited.</p><p>The J111 and J126’s improved performance is achieved thanks to the added steel gate. With the addition of the steel gate, the capacitance between the gate and channel is increased. This increased capacitance translates to increased current, allowing more current to flow through the channel. This increased current also results in a lower power dissipation and better performance.</p><p><strong>Applications</strong></p><p>The J111 and J126 are typically used in applications where low power dissipation or higher switching performance is beneficial. For example, the J111 and J126 are used in power supply circuits, audio amplifiers and instrumentation amplifiers, for switching and for biasing in sensitive applications.</p><p>The J111 and J126 are also used in industrial and automotive applications, such as controllers for circuit protectors, power supplies, and power adapters. They are also used in signal conditioning and detection circuits, as well as in filter networks and signal routing circuits.</p><p><strong>Conclusion</strong></p><p>The J111 and J126 are high performance JFETs that provide increased performance compared to traditional bipolar transistors. Thanks to the steel gate, these FETs offer lower power dissipation and higher transconductance. The J111 and J126 can be used in a wide range of applications, from consumer electronics to industrial and automotive.</p>The specific data is subject to PDF, and the above content is for reference
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