Allicdata Part #: | J111RLRPG-ND |
Manufacturer Part#: |
J111RLRPG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 35V 0.35W TO92 |
More Detail: | JFET N-Channel 35V 350mW Through Hole TO-92-3 |
DataSheet: | J111RLRPG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 35V |
Current - Drain (Idss) @ Vds (Vgs=0): | 20mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 3V @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 30 Ohms |
Power - Max: | 350mW |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | J111 |
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J 111RLRPGs, or junction field effect transistors, are solid state devices used to amplify, switch or control voltage. JFETs use a thin layer of silicon to control electric fields between two gates, allowing the gates to pass or block electric current. JFETs are widely used in the areas of computing, power electronics and communication circuits. Because of their low noise level, low cost and small size, JFETs are used in virtually all areas of engineering where semiconductor devices are used.
The working principle of a JFET is similar to that of a traditional transistor. In a typical JFET, two separate gates (source and drain) are created by a thin layer of highly resistive material, usually silicon. These two gates are attached to a thin layer of insulated material which acts as a dielectric and insulates the source and drain from the substrate.
When a small voltage is applied to the gate terminal of the JFET, it creates an electric field which acts on the charge carriers within the gate\'s silicon. This electric field creates a tunneling effect, allowing electric current to travel through the gate. The electric current that passes through the gate is determined by the amount of charge carriers and the electric field strength. As the voltage applied to the gate increases, the tunneling increases. This increases the electric current, which increases the voltage across the JFET.
The magnitude of the electric field determines the "turn on" current of the JFET, which is the minimum current needed for the transistor to turn on. The higher the electric field strength, the higher the turn on current. The current gain of the JFET, which determines the amount of amplification, is determined by the voltages applied to the gate terminals. The higher the voltage applied, the higher the current gain.
JFETs can be used as amplifiers, switches, logic gates and phase shifters. They are widely used in electronic circuits for audio equipment, communications systems, instrumentation and automobiles. In addition, JFETs are used in digital logic circuits as comparators, logic controllers, analog switches, level detectors and voltage regulators.
JFETs are often used in embedded systems where they can provide control functions such as switching and voltage amplification. They are also used in low noise applications, where their low power consumption and low voltage operation can provide an advantage over other types of transistors. Because of their low cost and wide availability, they are also often used as replacements for other types of transistors.
JFETs are popular devices in the electronics industry due to their small size, low power consumption and low noise. They are used in a variety of applications from computing to power electronics to communications circuits. They offer a high degree of control over voltage and current, and are easily integrated into many electronic systems, making them the ideal choice for many electronic designs.
The specific data is subject to PDF, and the above content is for reference
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