J111_D75Z Allicdata Electronics
Allicdata Part #:

J111_D75Z-ND

Manufacturer Part#:

J111_D75Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 35V 625MW TO92
More Detail: JFET N-Channel 35V 625mW Through Hole TO-92-3
DataSheet: J111_D75Z datasheetJ111_D75Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: --
Resistance - RDS(On): 30 Ohms
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: J111
Description

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Transistors - JFETs

J111_D75Z is a type of junction field effect transistor (JFET) which is used for amplification and switching applications. It has a P-Channel, N-Channel, and Depletion type. It is characterized by extremely low noise and high gain. For many decades now, the JFET has been one of the most popular transistors used in electronics and technology.

Application Field

The J111_D75Z can be used for a wide range of applications ranging from audio to RF. It is especially suited for analog signal processing such as mixing, filtering, and buffering. It can also be used in voltage regulators and in analog to digital converters. The low noise and high gain of this transistor makes it ideal for these applications.

Working Principle

The working principle of the J111_D75Z is similar to that of other junction field effect transistors. A JFET works like a field effect transistor (FET), but with a few distinctions. Generally, the JFET is turned on and off by impressed gate voltages at its gate terminal. This gate voltage creates a depletion region at the junction between the source electrode and the gate electrode. This depletion region affects the charge carrier concentrations in the semiconductor, which in turn affects the current flow through the transistor. This is how the device amplifies and controls current.

When a positive gate voltage is applied, the depletion region increases, which then decreases the current that flows through the transistor. This is due to the decrease in the number of charge carriers which can move from source to drain. Conversely, a negative gate voltage causes the depletion region to decrease and increases the current flow. This is due to the increase in the number of charge carriers which can move from source to drain. The JFET gives the engineer excellent control over the current flow, enabling the engineer to choose exactly the right voltage or current to get the desired effect.

The specific data is subject to PDF, and the above content is for reference

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