J309

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	N-Channel JFET
Frequency:	100MHz
Gain:	16dB
Voltage - Test:	10V
Current Rating:	30mA
Noise Figure:	--
Current - Test:	10mA
Power - Output:	--
Voltage - Rated:	25V
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	J309

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Introduction

The J309 FET is an RF power transistor designed for use in FM broadcast transmitter applications. It is a Darlington configuration, has a gain of 25 dB, and can handle 200 watts of power at 10.8-13.2 volts.

Applications of the J309

The J309 is a suitable device for use in RF power amplifiers, linear amplifiers and Class AB audio amplifiers. It is often used in FM broadcast transmitters for broadcast power levels ranging from 10 Watts to 200 Watts. The device is also suitable for use in frequency conversion, as well as for high-level switching.The J309 can also be found in other applications such as:

• Voltage regulators
• Digital transmission
• High-power DC-DC converters
• VHF and UHF frequency synthesizers

Working Principle

The J309 is a Darlington power transistor, which means that it is composed of two transistors: a NPN base-emitter small-signal transistor and a PNP collector-emitter power transistor. This configuration results in a high current gain (often referred to as beta), which makes it particularly suited for use in RF power and switching applications. The two transistors are connected at their base and collector terminals and share the same emitter terminal. When a signal is applied to the base of the NPN transistor, it will control the current flow through the PNP transistor. This creates a larger, amplified current signal at the collector and emitter of the PNP transistor. The current gain of the device (often called Beta or hFE) is typically 25 dB. The J309 is built using high-voltage process technology, which enables it to operate at higher collector-emitter voltages (up to 200 V). This makes it particularly well suited for use in high-power applications such as FM broadcast transmitters, where it can handle 200 W of power with a supply voltage of 10.8-13.2 V.

Conclusion

The J309 FET is an RF power transistor that is well-suited for use in FM broadcast transmitters. It is a Darlington configuration that has a gain of 25 dB and can handle up to 200 W of power with a supply voltage of 10.8-13.2 V. It can also be used in other applications such as voltage regulators, digital transmission, high-power DC-DC converters, and VHF and UHF frequency synthesizers. The device is composed of two transistors which are connected at their base-collector and share the same emitter. When a signal is applied to the base of the NPN transistor, it will control the current flowing through the PNP transistor, resulting in an amplified current signal at the collector-emitter.

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