J309G

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	N-Channel JFET
Frequency:	100MHz
Gain:	16dB
Voltage - Test:	10V
Current Rating:	30mA
Noise Figure:	--
Current - Test:	10mA
Power - Output:	--
Voltage - Rated:	25V
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	J309

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<p>The J309G N-Channel MOSFET is a high-performance transistor manufactured by SEPIC. This transistor exhibits higher breakdown voltage and lower on-state resistance than similar sized MOSFETs. It is most commonly used in RF applications, such as cellular base stations or RF amplifiers.</p><p>In RF applications, the J309G is typically used as a high-performance switching transistor. Its high breakdown voltage and low on-state resistance make it ideal for controlling the flow of currents, even under the high voltage environments typical of RF applications.</p><p>The working principle of the J309G is simple. It is an N-channel enhancement mode MOSFET, meaning it controls current flow through a source-drain channel. When no voltage is applied to the gate, the source and drain are separated by an insulated layer (the MOS gate oxide) and the MOSFET is in an OFF state.</p><p>When a positive voltage is applied to the gate, electrons in the N-type silicon substrate are attracted to the positive voltage, creating an inversion layer on the gate oxide. This inversion layer provides a conductive channel between the source and the drain, allowing current to flow.</p><p>The J309G is a high-performance MOSFET and its performance is determined by the parameters of its source-drain channel and gate oxide layer. The high breakdown voltage of the J309G is due to the large physical size of the source-drain channel, while the low on-state resistance is due to the small thickness of the gate oxide layer.</p><p>The J309G is an ideal choice for applications requiring a low on-state resistance and high breakdown voltage. It is often used in RF applications, where it can be relied upon to accurately control current flow and provide efficient signal amplification. While it is most commonly used for RF applications, it can also be used for other applications such as power switching, voltage conversion and voltage regulation.</p>

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