JANTX1N4112CUR-1

Series:	Military, MIL-PRF-19500/435
Packaging:	Bulk
Part Status:	Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz):	18V
Tolerance:	±2%
Power - Max:	500mW
Impedance (Max) (Zzt):	100 Ohms
Current - Reverse Leakage @ Vr:	50nA @ 13.7V
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	DO-213AA (Glass)
Supplier Device Package:	DO-213AA

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Introduction to JANTX1N4112CUR-1

JANTX1N4112CUR-1, is a type of a Zener diode with single configuration, which is widely used in various applications because of its features such as low leakage current, low forward voltage drop and high power dissipation. It is also an ideal choice for electrical devices and applications as it is able to provide predictable breakdown voltage and excellent temperature stability, along with its cost-effectiveness and small size.

Application fields for JANTX1N4112CUR-1

The JANTX1N4112CUR-1 can be used as a voltage reference source in precision, high input impedance and very low noise circuits, such as voltage regulators and voltage dividers. It is also commonly used to provide overvoltage protection, voltage stabilization, and to reversibly shunt excess current over a very narrow voltage range.The components: small size, low leakage current, and small reverse leakage current make it suitable for automotive applications, including automotive electronics, electrical storage cabinet systems, voltage suppression, temperature measurement and control, etc.In addition, it can also be used in other applications such as DC-DC converters, telecom, signal processing, and various semiconductor test equipment.

Working principles of JANTX1N4112CUR-1

The JANTX1N4112CUR-1 is a semiconductor device that consists of two electrodes: an anode (positive) and a cathode (negative). When an external voltage is applied to the diode, an electric field is created in the depletion zone (the region between the anode and the cathode) which affects the majority carrier’s movement. This causes a decrease in current and an increase in the reverse voltage (VR) across the diode junction. When VR reaches the Zener voltage (VZ) of the device, it enters the breakdown region and the current through the device increases substantially due to the avalanche effect.The breakdown voltage of a Zener diode like the JANTX1N4112CUR-1 can be precisely determined during its manufacture by adjusting its thickness and doping level. This enables the device to operate as a voltage reference source in precision, high input impedance and very low noise circuits.

Conclusion

JANTX1N4112CUR-1 is a type of Zener diode with single configuration that offers many advantages such as small size, low leakage current, and small reverse leakage current. It is widely used for various applications such as voltage reference source, DC-DC converters, telecom, signal processing, and various semiconductor testing equipment. Furthermore, its breakdown voltage is precisely determined during its manufacture, which makes it an ideal choice for applications that require precision, high input impedance and very low noise circuits.

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