Allicdata Part #: | 1086-20685-ND |
Manufacturer Part#: |
JANTX2N2221AUB |
Price: | $ 11.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 50V 0.8A |
More Detail: | Bipolar (BJT) Transistor NPN 50V 800mA 500mW Surf... |
DataSheet: | JANTX2N2221AUB Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 10.54290 |
Series: | Military, MIL-PRF-19500/255 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 10V |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, No Lead |
Supplier Device Package: | UB |
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Transistors are one of the most fundamental components used in electronic devices and circuits. A bipolar transistor, commonly known as a BJT, is a type of transistor that uses both electrons and holes for its operation. The JANTX2N2221AUB is a single, small signal NPN bipolar junction transistor (BJT) often used for signal amplification and switching. In this article, we\'ll discuss the application field and the working principle of this transistor.
JANTX2N2221AUB Features
The JANTX2N2221AUB is an NPN bipolar junction transistor. It is a medium-power device with an emitter-base breakdown voltage of 3.2 V and a VCBO of 80V. It is often used in signal amplification, switching circuits, and other applications due to its high current gain and current-handling capability. Some of the other features of this BJT include:
- Collector-Emitter Saturation Voltage: 0.3V
- Collector-Emitter Breakdown Voltage- 80V
- Maximum Power Dissipation: 200 mW
- Operating Temperature Range: -55°C to 125°C
Application Field
The JANTX2N2221AUB is mainly used in amplifying and switching applications due to its high current gain. It can be used to amplify weak signals up to a useable level, and is often employed as a switch to enable or disable circuits. It is also used in low-power amplifiers, such as those used in portable radios, as well as in power amplifiers. It can also be used in video circuits and motor controllers due to its high current-handling capability.
Working Principle
The JANTX2N2221AUB is an NPN BJT, which means it is made up of three layers of semiconductor material. The first layer is known as the emitter, the middle layer is known as the base, and the final layer is known as the collector. The BJT is switched on when current is applied to the base, which in turn allows current to flow between the emitter and the collector. The current gain of the BJT is defined by hfe, which is the ratio of collector current to base current. The current gain of the JANTX2N2221AUB is typically between at least 70, but can reach up to 1000.
In summary, the JANTX2N2221AUB is a single, small signal NPN bipolar junction transistor often used for signal amplification and switching. It is featured with an emitter-base breakdown voltage of 3.2 V and a VCBO of 80V and can handle currents up to 200 mW. It is mainly used in amplifying and switching applications due to its high current gain, and can be used in video circuits, portable radios, motor controllers and power amplifiers. The current gain of the JANTX2N2221AUB is typically between at least 70, but can reach up to 1000.
The specific data is subject to PDF, and the above content is for reference
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