Allicdata Part #: | 1086-20734-ND |
Manufacturer Part#: |
JANTX2N2484UA |
Price: | $ 18.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 60V 0.05A |
More Detail: | Bipolar (BJT) Transistor NPN 60V 50mA 360mW Surfa... |
DataSheet: | JANTX2N2484UA Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 16.94170 |
Series: | Military, MIL-PRF-19500/376 |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max): | 2nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 225 @ 10mA, 5V |
Power - Max: | 360mW |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD, No Lead |
Supplier Device Package: | UA |
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The JANTX2N2484UA is a medium power, NPN, silicon transistor. It is part of the plastic-encapsulated transistor product family, designed for general purpose and switching applications and developed for transporting electrical energy under the category of transistors, bipolar (BJT), and single.
The JANTX2N2484UA is a single NPN type bipolar junction transistor that has a 120V Vce (s) rating and is designed for use in a variety of general purpose and switching applications. This transistor has been optimized with tight parameter limits, improved hFE and double-diffused epitaxial process to maximize device performance, area, and reliability. It features an on-chip collector-base resistor which provides gain and temperature variation control, as well as an on-chip emitter resistor which provides impedance matching and base current limitation.
The transistor is suited for use as an amplifier, switch or oscillator in consumer, communication, industrial and military applications. Its capabilities include high voltage and medium current switching, general small-signal amplification, current limiting, and logic-level switching. The transistor’s versatile structure and medium power rating make it ideal for a wide range of applications.
The JANTX2N2484UA utilizes what is known as a bipolar junction transistor (BJT). A BJT consists of three regions, the base, collector, and emitter. It works by applying a voltage at the base or collector and creating an electric field in the base-collector junction. This electric field allows electrons to be transferred from the emitter to collector regions, thus creating a current flow through the circuit. This type of transistor is commonly used as a voltage-current amplifier, current switch, and for logic signals.
The JANTX2N2484UA is designed to meet the requirements of applications that require excellent reliability, quality, and performance. It operates from -65°C to +150°C junction temperature range, making it ideal for applications that require high temperature operation. Additionally, it is available in several compatible package options to accommodate different design requirements. It is also a RoHS compliant device.
In conclusion, the JANTX2N2484UA is a versatile and reliable NPN transistor that is designed for use in a variety of general purpose and switching applications. It has excellent reliability, quality and performance, making it ideal for applications that require high temperature operation. Additionally, it features on-chip collector-base resistor and an on-chip emitter resistor which provide gain and temperature variation control, as well as impedance matching and base current limitation.
The specific data is subject to PDF, and the above content is for reference
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